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Influence of Ohmic Contacts on Semi-Insulating GaAs Detector Performances

Published online by Cambridge University Press:  15 February 2011

A. Castaldini ,
A. Cavallini ,
C. Canali ,
C. Chiossit ,
C. Del Papa ,
F. Nava  and
C. Lanzieri
A. Castaldini
Affiliation:
IJNFM and Dept. of Physics, Univ. Bologna, Italy
A. Cavallini
Affiliation:
IJNFM and Dept. of Physics, Univ. Bologna, Italy
C. Canali
Affiliation:
Dept. of Physics, Univ. Modena, Italy also at INFN
C. Chiossit
Affiliation:
Dept. of Physics, Univ. Modena, Italy also at INFN
C. Del Papa
Affiliation:
Dept. of Physics, Univ. Udine, Italy also at INFN
F. Nava
Affiliation:
Dept. of Physics, Univ. Modena, Italy also at INFN
C. Lanzieri
Affiliation:
ALENIA S.p.A. Roma, Italy
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Abstract

Ohmic contact has been observed to play an important role in the performances ofLiquid Encapsulated Czochralski gallium arsenide particle detectors since it is possible to control the injection of charge carriers which determines the device performances. Alloyed and implanted contacts characteristics have been compared to relate the presence of electrically active defects induced during contact preparation to the final detector efficiency. In-situ optical probing investigations have been carried out to analyze the electric field distribution. Spectroscopic investigations show that the contact fabrication process significantly influences the trap density, whilst it does not change their type.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 431
Copyright
Copyright © Materials Research Society 1996

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