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The Influence of Local Magnetization on Transport in Cd0.91Mn0.09Te:In

Published online by Cambridge University Press:  15 February 2011

S. Von Molnar ,
T. Penney ,
I. Terry  and
P. Becla
S. Von Molnar
Affiliation:
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
T. Penney
Affiliation:
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
I. Terry
Affiliation:
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 Department of Physics, University of Durham, Science Laboratories, South Road, Durham, DH1 3LE, UK
P. Becla
Affiliation:
MIT Bitter National Magnet Lab., Cambridge, MA. 02139
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Abstract

We describe the influence of local magnetization on electron localization and transport properties on the insulating side of the metal insulator transition in the dilute magnetic persistent photoconductor Cd0.091 Mn0.09Te:ln. Measurements of both the temperature dependence of the transport properties, and also the dielectric constant, are reported for just one sample in which the carrier concentration n was varied by photodoping. From these results we are able to extract the carrier concentration dependence of the localization length and the permitivity of the electrons. We also report onl a new transport effect which occurs at ultra low temperatures and/or carrier concentrations very close to the metal insulator transition. We find that this mechanism is totally magnetic in origin and are able to explain it in terms of the well devewloped ideas of magnetic polarons in magnetic semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 290: Symposium N – Dynamics in Small Confining Systems , 1992 , 335
Copyright
Copyright © Materials Research Society 1993

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