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Influence of Ion-Implantation on Characteristics of Picosecond Photoconductive Switches

Published online by Cambridge University Press:  25 February 2011

John F. Knudsen ,
Robert C. Bowman Jr. ,
Duane D. Smith  and
Steven C. Moss
John F. Knudsen
Affiliation:
The Aerospace Corporation, 2350 E. El Segundo Blvd., El Segundo, CA 90245
Robert C. Bowman Jr.
Affiliation:
The Aerospace Corporation, 2350 E. El Segundo Blvd., El Segundo, CA 90245
Duane D. Smith
Affiliation:
The Aerospace Corporation, 2350 E. El Segundo Blvd., El Segundo, CA 90245
Steven C. Moss
Affiliation:
The Aerospace Corporation, 2350 E. El Segundo Blvd., El Segundo, CA 90245
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Abstract

Ion-implantation induced amorphization has been used to modify the linearity of response of ultrafast photoconductive switches fabricated on SOS. The extent of amorphization was determined using various materials characterization techniques. TRIM-86 Monte Carlo calculations were used to model the defect densities produced by ion implantation. Linearity of response is critically dependent upon the nature of the semiconductor region under metallic contacts and the character of the response is opposite to that expected from reports in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 629
Copyright
Copyright © Materials Research Society 1989

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References

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