Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-20T06:24:44.377Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Interfacial Delamination on Channel Cracking of Brittle Thin Films

Published online by Cambridge University Press:  01 February 2011

Yaoyu Pang  and
Rui Huang
Yaoyu Pang
Affiliation:
[email protected], University of Texas at Austin, Department of Aerospace Engineering and Engineering Mechanics, 1 University Station, C0600, Austin TX 78712, United States
Rui Huang
Affiliation:
[email protected], University of Texas at Austin, Department of Aerospace Engineering and Engineering Mechanics, 1 University Station, C0600, Austin, TX, 78712, United States
Get access

Abstract

Channeling cracks in low-k dielectrics have been observed to be a key reliability issue for advanced interconnects. The constraint effect of surrounding materials including stacked buffer layers has been studied. This paper analyzes the effect of interfacial delamination on the fracture condition of brittle thin films on elastic substrates. It is found that stable delamination along with the growth of a channel crack is possible only for a specific range of elastic mismatch and interface toughness. An effective energy release rate is defined to account for the influence of interfacial delamination on both the driving force and the fracture resistance, which can be significantly higher than the case assuming no delamination.

Keywords

adhesionfracturethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B06-04
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Liu, X.H., Lane, M.W., Shaw, T.M., Liniger, E.G., Rosenberg, R.R., and Edelstein, D.C., Proc. Advanced Metallization Conference 2004, pp. 361–367.Google Scholar
2 Liu, X.H., Lane, M.W., Shaw, T.M., Simonyi, E., Int. J. Solids Struct. 44, 1706–1718 (2007).Google Scholar
3 Tsui, T.Y., McKerrow, A.J., and Vlassak, J.J., J. Mech. Phys. Solids 54, 887–903 (2006).Google Scholar
4 Tsui, T.Y., McKerrow, A.J., and Vlassak, J.J., J. Mater. Res. 20, 2266–2273 (2005).Google Scholar
5 Beuth, J.L., Int. J. Solids Struct. 29, 63–191 (1992).Google Scholar
6 Huang, R., Prevost, J.H., Huang, Z.Y., and Suo, Z., Eng. Frac. Mech. 70, 2513–2526 (2003).Google Scholar
7 Ambrico, J.M. and Begley, M.R., Thin Solid Films 419, 144–153 (2002).Google Scholar
8 Huang, R., Prevost, J.H., and Suo, Z., Acta Mater. 50, 4137–4148 (2002).Google Scholar
9 Cordero, N., Yoon, J., and Suo, Z., Appl. Phys. Lett. 90, 111910 (2007).Google Scholar
10 Ye, T., Suo, Z., and Evans, A.G., Int. J. Solids Struct. 29, 2639–2648 (1992).Google Scholar
11 He, J., Xu, G., and Suo, Z., Proc. 7th Int. Workshop on Stress-Induced Phenomena in Metallizationc (Austin, Texas, 14-16 June 2004), pp. 3–14.Google Scholar
12 Suo, Z., Reliability of Interconnect Structures. In: Interfacial and Nanoscale Fracture, pp. 265–324 (Elsevier, Oxford, 2003).Google Scholar
13 Yu, H.H., He, M.Y., and Hutchinson, J.W., Acta Mater. 49, 93–107 (2001).Google Scholar
14 Hutchinson, J.W. and Suo, Z., Advances in Applied Mechanics 29, 63–191 (1992).Google Scholar