Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T07:55:38.385Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Hydrogen On The Solid Phase Epitaxial Regrowth of Strained Layer Silicon Germanium Alloys

Published online by Cambridge University Press:  15 February 2011

D. Love ,
D. Endisch ,
T.W. Simpson ,
T.D. Lowes ,
I.V. Mitchell  and
J.-M. Baribeau
D. Love
Affiliation:
University of Western Ontario, Department of Physics, London, Ontario, Canada, N6A3K7
D. Endisch
Affiliation:
University of Western Ontario, Department of Physics, London, Ontario, Canada, N6A3K7
T.W. Simpson
Affiliation:
University of Western Ontario, Department of Physics, London, Ontario, Canada, N6A3K7
I.V. Mitchell
Affiliation:
University of Western Ontario, Department of Physics, London, Ontario, Canada, N6A3K7
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada, KIA 0R6
Get access

Abstract

Strained layer Si/Si0.79Ge0.21 superlattices consisting of 16 alternating 19.0 nm Si0.79Ge0.21 / 18.5 nm Si layers have been amorphized by Si ion irradiation, then implanted with H ions to nominal atomic concentrations of 1%, 0.1% and 0.05% within the amorphized region. Subsequent solid phase epitaxy (SPE) at a regrowth temperature of 575°C was monitored in situ by time resolved reflectivity (TRR) measurements, while changes in the H distribution were measured by elastic recoil detection analysis (ERDA). Analysis was supplemented by Rutherford backscattering spectrometry (RBS), x-ray double crystal diffraction and reflectivity (DCD/XRF) and transmission electron microscopy (TEM). TRR data reveals a decrease in the initial SPE rate in the Si substrate from 4.9 Å/sec (no H) to 2Å/sec for 1% H concentration as well as a rate decrease as the interface enters the Si/SiGe layers. TRR also indicates an increased roughness in the crystal/amorphous interface with increasing H concentration. ERDA reveals that a significant fraction of the implanted H is stable in the amorphous region for the anneal times (10-30 min) at 575°C, while in the regrown lattice the H concentration has dropped below 20 ppm, near the detection limit of the ERDA. DCD shows almost no strain in the regrown structures. TEM and RBS channeling techniques reveal degradation in the crystal quality of epitaxially regrown structures and a large concentration of strain relieving defects originating near the second deepest of eight SiGe layers in all regrown structures. XRF indicates decreasing sharpness of the regrown Si/SiGe interfaces with increasing H concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 461
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Schäffler, F., Solid State Electr. 37 765 (1994).Google Scholar
[2] Chilton, B.T., Robinson, B.J., Thompson, D.A., Jackman, T.E. and Baribeau, J.-M., Appl. Phys. Lett. 54 42 (1989).Google Scholar
[3] Paine, D.C., Howard, D.J., Stoffel, N.G. and Horton, J.A., J. Mater. Res. 5 1023 (1990).Google Scholar
[4] Lee, C., Haynes, T. E. and K. Jones, S., Appl. Phys. Lett. 62 501 (1993).Google Scholar
[5] Atzmon, Z., Eizenberg, M., Shachamdiamand, Y., Mayer, J.W. and Schäffler, F., J. Appl. Phys. 75 3936 (1994).Google Scholar
[6] Elliman, R.G. and Wong, W.C., Nucl. Instr. Meth. B85 178 (1994).Google Scholar
[7] Paine, D.C., Howard, D.J. and Stoffel, N.G., J. Electr. Mater. 20 735 (1991).Google Scholar
[8] Corni, F., Frabboni, S., Ottaviani, G., Queirolo, G., Bisero, D., Bresolin, C., Fabbri, R. and Servidori, M., J. Appl. Phys. 71 2644 (1992).Google Scholar
[9] Shiryaev, S.Y., Fyhn, M. and Larsen, A.N., Appl. Phys. Lett. 63 3476 (1993).Google Scholar
[10] Kringhoj, P. and Elliman, R.G., Phys. Rev. Lett. 73 858 (1994).Google Scholar
[11] Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 48 4243 (1977).Google Scholar
[12] Kennedy, E.F., Csepregi, L., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 48 4241 (1977).Google Scholar
[131 Roth, J.A., Olsen, G.L., Jacobson, D.C. and Poate, J.M., Appl. Phys. Lett. 57 1023 (1990).Google Scholar
[14] Baribeau, J.-M., Jackman, T.E., Houghton, D.C., Maigne, P. and Denhof, M.W., J. Appl. Phys. 63 5738 (1988).Google Scholar
[15] Fewster, P.F., Semicond. Sci. Technol. 8 1915 (1993).Google Scholar
[16] Chu, W.K., Mayer, J.W. and Nicolet, M.-A., Backscattering Spectrometry (Academic Press, New York, 1978).Google Scholar
[17] Ziegler, J.F., Biersack, J.P. and Littmark, U., The Stopping and Ranges of Ions in Solids (Pergamon, New York, 1985).Google Scholar
[18] SzilAgyi, E., PAszti, F., Quillet, V. and Abel, F., Nucl. Inst. Meth. B85 63 (1994).Google Scholar
[19] Doolittle, L.R., Nucl. Inst. Meth. B9 344 (1985).Google Scholar
[20] Thompson, M.O., Doolittle, L.R., (private communication).Google Scholar
[21] Milne, E.A., Phys. Rev. 93 762 (1954).Google Scholar
[22] Olsen, G.L. and Roth, J.A., Materials Science Reports, 3 1 (1988).Google Scholar
[23] Oberlin, J.C., Chami, A.C., Ligeon, E. and Prunier, C., Nucl. Instr. Meth. B19 (1987) 462.Google Scholar
[24] Zellama, K., Germain, P., Squelard, S. and Monge, J., J. Non-Cryst. Solids, 35 & 36 (1980) 225.Google Scholar
[25] Licoppe, C., Nissim, Y.I., Meriadec, C. and Krauz, P., J. Appi. Phys. 60 (1986) 1352.Google Scholar