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Influence of hydrogen incorporation into Silicon on the room-temperature photoluminescence

Published online by Cambridge University Press:  15 February 2011

J. Rappich ,
Th. Dittrich ,
Y. Timoshenko ,
I. Beckers  and
W. Fuhs
J. Rappich
Affiliation:
Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
Th. Dittrich
Affiliation:
TU-München, Physik-Department E-16, D-85747 Garching, Germany
Y. Timoshenko
Affiliation:
Faculty of Physics, M.V. Lomonosov University, 119899 Moscow, Russia
I. Beckers
Affiliation:
Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
W. Fuhs
Affiliation:
Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
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Abstract

We investigated the possibility to use the photoluminescence (PL) emission at room temperature for the characterization of grain boundary and surface passivation of μc-Si and single crystalline silicon. The PL-spectra of c-Si and μc-Si taken at 300 K consist of an emission band around 1.1 and 1 eV, respectively. Measuring the PL intensity we study the influence of electrochemical and plasma passivation by hydrogen. We compare the behavior of the films to that of Si crystals. In this case the PL intensity is high for a well H-terminated c-Si surface and decreases during cathodic polarization (hydrogen evolution) which points to the formation of additional non-radiative recombination centers. Whereas the PL intensity of the as prepared μc-Si films is unchanged, that of the annealed films increases during hydrogen evolution indicating the electrochemical passivation of defects on grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 797
Copyright
Copyright © Materials Research Society 1997

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References

1.Rappich, J., Dittrich, Th. and Yu, V.. Timoshenko; J. Electrochem. Soc. in pressGoogle Scholar
2.Nickel, N.H., Johnson, N.M. and Jackson, W.B.; Appl. Phys. Lett. 62, 3285 (1993)Google Scholar
3.Rauscher, S., Dittrich, Th., Aggour, M., Rappich, J., Flietner, H. and Lewerenz, H.J.; Appl. Phys. Lett. 66, 3018 (1995)Google Scholar
4.Rappich, J. and Lewerenz, H. J.; J. Electrochem. Soc. 142, 1234 (1995)Google Scholar
5.Mandai, K.C., Ozanam, F. and Chazaviel, J.-N.; Appl. Phys. Lett. 57, 2788 (1990)Google Scholar
6.Bhat, P.K., Disprose, G., Searle, T.M., Austin, I.G.Le Comber, P.G. and Spear, W.E.; Physica 117B&118B, 917 (1983)Google Scholar
7.Yamaguchi, M. and Morigaki, K.; J. Phys. Soc. Jap. 62, 2915 (1993)Google Scholar