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The Influence of Hydrogen Addition on the Chemical Properties of Hydrogenated Aluminum Nitride Films Prepared by RF Reactive Sputtering

Published online by Cambridge University Press:  10 February 2011

Jai-Young Lee  and
Yoon-Joong Yong
Jai-Young Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong-dong 373–1, Yusung-gu, Taejon, 305–701, South Korea
Yoon-Joong Yong
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong-dong 373–1, Yusung-gu, Taejon, 305–701, South Korea
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Abstract

Hydrogenated aluminum nitride (A1N:H) films have been deposited on the (100) silicon wafers by the RF reactive magnetron sputtering method with H2 gas in addition to an Ar-N2 gas mixture. Stoichiometric A1N films without oxygen impurities can be prepared by adding 10 % H2 to reactive gas, which is proven by Rutherford Backscattering Spectrometry (RBS). The bonding aspects of Al, N, O and H atoms in A1N:H films have been examined by X-ray Photoelectron Spectroscopy (XPS) and Fourier Transform Infrared (FTIR) to understand the effects of H2 addition. The chemical shift of the binding energies of A1, N and O atoms in A1N:H films from XPS analysis and the change of N-H bonding in FTIR with respect to different partial pressures of H2 gas have been confirmed. The role of H atoms is suggested to facilitate bonding with unbound N atoms in A1N:H films and hinder N-O bonding, thus, reducing oxygen concentration in A1N:H films. Also, the activation energy for the evolution of H2 gas from A1N:H film has been determined to be 0.11 eV/atom through a Kissinger-type analysis by a thermal desorption test using Gas Chromatograph(GC). This result implies that the hydrogen atom in film forms the hydrogen bond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 999
Copyright
Copyright © Materials Research Society 1997

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References

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