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Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition

Published online by Cambridge University Press:  21 March 2011

U. Forsberg ,
A. Henry ,
Ö. Danielsson ,
M.K. Linnarsson  and
E. Janzén
U. Forsberg
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, SwedenTel: +46 (0) 13 28 26 99, Fax: +46 (0) 14 23 37
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, SwedenTel: +46 (0) 13 28 26 99, Fax: +46 (0) 14 23 37 email:[email protected]
Ö. Danielsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, SwedenTel: +46 (0) 13 28 26 99, Fax: +46 (0) 14 23 37 email:[email protected]
M.K. Linnarsson
Affiliation:
Solid State Electronics, Royal Institute of Technology, SE-164 40 Kista, Sweden
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, SwedenTel: +46 (0) 13 28 26 99, Fax: +46 (0) 14 23 37 email:[email protected]
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Abstract

We have investigated the nitrogen incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor. The incorporation mechanism for 4H- and 6H-SiC both for Si- and C-face material is presented. A comparison with previously published results in a cold-wall reactor is also made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E3.10
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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