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Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
Published online by Cambridge University Press: 15 March 2011
Abstract
We have investigated the nitrogen incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor. The incorporation mechanism for 4H- and 6H-SiC both for Si- and C-face material is presented. A comparison with previously published results in a cold-wall reactor is also made.
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- Copyright © Materials Research Society 2001