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Influence of Growth Conditions on the Modulation Mechanism of Photoreflectance Spectra of Single InGaAs/InAlAs Quantum Wells

Published online by Cambridge University Press:  22 February 2011

Y. Baltagi ,
C. Bru ,
T. Benyatrou ,
M.A. Garcia-Perez ,
G. Guillot ,
M. Gendry ,
J.L Leclercq ,
V. Drouot  and
G. Hollinger
Y. Baltagi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - 69621 Villeurbanne Cedex, France
C. Bru
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - 69621 Villeurbanne Cedex, France
T. Benyatrou
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - 69621 Villeurbanne Cedex, France
M.A. Garcia-Perez
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - 69621 Villeurbanne Cedex, France
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - 69621 Villeurbanne Cedex, France
M. Gendry
Affiliation:
LEAME (URA CNRS 848) - Ecole Centrale de Lyon, 69131 Ecully Cedex, France
J.L Leclercq
Affiliation:
LEAME (URA CNRS 848) - Ecole Centrale de Lyon, 69131 Ecully Cedex, France
V. Drouot
Affiliation:
LEAME (URA CNRS 848) - Ecole Centrale de Lyon, 69131 Ecully Cedex, France
G. Hollinger
Affiliation:
LEAME (URA CNRS 848) - Ecole Centrale de Lyon, 69131 Ecully Cedex, France
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Abstract

Using Photoreflectance (PR) measurements, we have investigated In0.53Ga0.47As single quantum wells (SQW) with In0.52Al0.48As barriers grown by MBE on InP substrates. Unusual lineshapes of PR spectra are observed for the fundamental transition in some of the SQW. This phenomenon is shown to be independent on the widths of both the SQW (5nm or 10nm) and the surface barrier layer (between 65nm and 300nm). PR spectra are recorded at different temperatures and in different samples, as well as with a secondary pump laser beam. From these measurements, it is concluded that interface defects exist in the SQW grown at 525°C without growth interruption. Such defects are clearly evidenced in room temperature PR experiments and confirmed by PL measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 199
Copyright
Copyright © Materials Research Society 1994

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