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Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy

Published online by Cambridge University Press:  01 February 2011

Hidekazu Tsuchida ,
Isaho Kamata ,
Kazutoshi Kojima ,
Kenji Momose ,
Michiya Odawara ,
Tetsuo Takahashi ,
Yuuki Ishida  and
Keiichi Matsuzawa
Hidekazu Tsuchida
Affiliation:
[email protected], CRIEPI, Materials Science Research Laboratory, 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan, +81-70-6568-9557, +81-46-856-5571
Isaho Kamata
Affiliation:
[email protected], Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan
Kazutoshi Kojima
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Kenji Momose
Affiliation:
[email protected], SHOWA DENKO K.K. (SDK), 1505 Shimokagemori, Chichibu, Saitama, 369-1871, Japan
Michiya Odawara
Affiliation:
[email protected], SHOWA DENKO K.K. (SDK), 1505 Shimokagemori, Chichibu, Saitama, 369-1871, Japan
Tetsuo Takahashi
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Yuuki Ishida
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Keiichi Matsuzawa
Affiliation:
[email protected], SHOWA DENKO K.K. (SDK), 1505 Shimokagemori, Chichibu, Saitama, 369-1871, Japan
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Abstract

Formation of interfacial dislocations (IDs) and dislocation half-loop arrays (HLAs) and their appearance in 4H-SiC epi-wafers are investigated by X-ray topography and KOH etching analysis. Synchrotron reflection X-ray topography demonstrates the ability to image IDs and HLAs simultaneously and reveal their densities as well as spatial distributions in the epi-wafers. The vertical location of IDs in the epi-wafer is also examined by this technique. The influence of wafer warp, in-situ H2 etching prior to epitaxial growth, substrate off-angle as well as the growth face (Si-face and C-face) on the densities and spatial distributions of IDs and HLAs are discussed.

Keywords

vapor phase epitaxy (VPE)dislocationscrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D04-03
Copyright
Copyright © Materials Research Society 2008

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References

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