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Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells

Published online by Cambridge University Press:  04 March 2015

Michael Lübben ,
Panagiotis Karakolis ,
Anja Wedig ,
Vassilios Ioannou ,
Pascal Normand ,
Panagiotis Dimitrakis  and
Ilia Valov
Michael Lübben
Affiliation:
Peter Gruenberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany
Panagiotis Karakolis
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
Anja Wedig
Affiliation:
Peter Gruenberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany
Vassilios Ioannou
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
Pascal Normand
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
Panagiotis Dimitrakis
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
Ilia Valov
Affiliation:
Peter Gruenberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany
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Abstract

The behavior of the redox-based resistive switching memories is influenced by chemical interactions between the electrode and the solid electrolyte, as well as by local environment. The existence of different chemical potential gradients is resulting in nanobattery effect lowering the stability of the devices. In order to minimize these effects we introduce a graphene layer at the active electrode – solid electrolyte interface. We observe that graphene is acting as an effective diffusion barrier in the SiO2-based electrochemical metallization cells and acts catalytically on the electrochemical processes prior to resistive switching.

Keywords

memoryelectronic materialsecondary ion mass spectroscopy (SIMS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 29 - 34
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

The International Technology Roadmap for Semiconductors-ITRS 2011 Edition. (2011).Google Scholar
Waser, R. and Aono, M., “Nanoionics-based resistive switching memories”, Nature Materials, 6, 833 (2007)CrossRefGoogle ScholarPubMed
Valov, I., “Redox-Based Resistive Switching Memories (ReRAMs):Electrochemical Systems at the Atomic Scale”, ChemElectroChem, 1, 26–36 (2014)CrossRefGoogle Scholar
Valov, I., Linn, E., Tappertzhofen, S., Schmelzer, S., van den Hurk, J., Lentz, F. & Waser, R., “Nanobatteries in redox-based resistive switches require extension of memristor theory”, Nat. Commun. 4, 1771 (2013)CrossRefGoogle ScholarPubMed
Tappertzhofen, S., Linn, E., Bottger, U., Waser, R., Valov, I., “Nanobattery Effect in RRAMs - Implications on Device Stability and Endurance”, IEEE Electr. Dev. Lett. 35, 208 (2014)CrossRefGoogle Scholar
van den Hurk, J, Dippel, A.C., Cho, D.Y., Straquadine, J., Breuer, U., Walter, P., Waser, R., Valov, I., “Physical origins and suppression of Ag dissolution in GeSx-based ECM cells”, Phys Chem Chem Phys, 16, 18217 (2014)CrossRefGoogle Scholar
Cho, D.-Y. et al. . “Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory”, Adv. Mater. 24, 4552 (2012)CrossRefGoogle ScholarPubMed
Ruoff, R. S., Bielawski, C. W., and Dreyer, D. R., “From Conception to Realization: An Historial Account of Graphene and Some Perspectives for Its Future”, Angew. Chem. Int. Ed. (2010), 49, 9336 – 9345 Google Scholar
Dash, G. N., Pattanaik, S. R., Behera, S., “Graphene for Electron Devices: The Panorama of a Decade”, J. Electron Device Society 2, 77–104 (2014)CrossRefGoogle Scholar
Chen, Hong-Yu, Tian, He, Gao, Bin, Yu, Shimeng, Liang, Jiale, Kang, Jinfeng, Zhang, Yuegang, Ren, Tian-Ling, Philip Wong, H.-S., “Electrode/Oxide Interface Engineering by Inserting Single-Layer Graphene:Application for HfOx–Based Resistive Random Access Memory”, IEDM 2012 Techn. Digest, 489–492 CrossRefGoogle Scholar
Yang, Yuchao, Lee, Jihang, Lee, Seunghyun, Liu, Che-Hung, Zhong, Zhaohui, and Lu, Wei, “Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element”, Adv. Mater., 26, 3693–3699 (2014)CrossRefGoogle ScholarPubMed
Suk, J. W., Kitt, A., Magnuson, C.W., Hao, Y., Ahmed, S., An, J., et al. ., “Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates” ACS Nano,5, 6916–6924 (2011)CrossRefGoogle ScholarPubMed
Tappertzhofen, S., Menzel, S., Valov, I., Waser, R., “Redox Processes in Silicon Dioxide Thin Films using Copper Microelectrodes”, Appl. Phys. Lett., 99, 203103 (2011)CrossRefGoogle Scholar