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Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors

Published online by Cambridge University Press:  10 February 2011

M. Leszczyński ,
J. Bąk-Misiuk ,
J. Domagała  and
T. Suski
M. Leszczyński
Affiliation:
High Pressure Research Center, PAS, Sokolowska 29/37, 01–142 Warsaw, Poland, [email protected]
J. Bąk-Misiuk
Affiliation:
Institute of Physics, PAS, Al. Lotników 32/46, 02–668 Warsaw, Poland, [email protected]
J. Domagała
Affiliation:
Institute of Physics, PAS, Al. Lotników 32/46, 02–668 Warsaw, Poland, [email protected]
T. Suski
Affiliation:
High Pressure Research Center, PAS, Sokolowska 29/37, 01–142 Warsaw, Poland, [email protected]
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Abstract

Lattice parameters of semiconductors depend on the concentration of free electrons via the deformation potentials of the occupied minima of the conduction bands. In the presented work we examined the lattice parameters of variously doped GaN samples (epitaxial layers on sapphire and on SiC, bulk crystals grown at high hydrostatic pressure and homoepitaxial layers). The following dopants were used: Si, Mg and O. The measurements were performed using high resolution X-ray diffractometry. The results indicate that free electrons expand the lattice what confirms a negative value of the deformation potential of the Γ minimum of the conduction band. However, for Mg-doping (acceptor) we observed the lattice expansion as well. This violates the Vegard's law, as Mg ions are smaller than Ga ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 311
Copyright
Copyright © Materials Research Society 1997

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