Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-09T07:58:26.765Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Energy Deposited by Energetic Particle Bombardment on Thin Film Characteristics

Published online by Cambridge University Press:  28 February 2011

Harold F. Winters ,
W. Eckstein  and
H. J. Coufal
Harold F. Winters
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120–6099
W. Eckstein
Affiliation:
Max-Planck-Institut fur Plasmaphysik, D-8046 Garching, Munich, Germany
H. J. Coufal
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120–6099
Get access

Abstract

It has been recognized since the 1960's that bombardment of a growing thin film by energetic particles strongly influences film properties. Particle bombardment has generally been accomplished by accelerating ions into the growing film. However, it has also been recognized since the 1960's that energetic particles reflected from the target influence the characteristics of films grown by physical sputtering and many experiments have been interpreted on this basis. A systematic study of the energy reflected from the surface by normally incident, singly charged noble-gas ions on five substrates of different masses has recently been published. This data along with sputter yields from the literature allow estimates to be made which were previously unavailable. The energy reflected from the target is carried away by electrons, sputtered particles and reflected ions (neutrals). The purpose of this paper is to provide basic information which will allow thin film scientists to estimate the influence of various experimental parameters on the amount of energy arriving at the growing film. The energy reflected from the target per sputtered atom will be given as a function of ion mass, target mass, and ion energy. TRIM.SP Monte Carlo calculations will be used to estimate the ratio of the energy carried away by sputtered atoms to that carried away by reflected ions. Calculations will also be used to estimate the average energy of the sputtered atoms as a function of ion mass, substrate mass and ion energy. It will be shown how this information can be used to guide the adjustment of experimental parameters in sputtering environments so as to control film characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 735
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Frerich, R., J. Appl. Phys. 38, 1898 (1962).Google Scholar
2. Maissell, L.I. and Schaible, P.M., J. Appl. Phys. 36, 237 (1965).Google Scholar
3. Winters, H.F. and Kay, E., j. Appl. Phys. 43, 794 (1972).Google Scholar
4. Mattox, D.M., Electrochem. Technol. 2, 295 (1964).Google Scholar
5. Mattox, D.M., j. Vac. Sci. Technol. 10, 47 (1973).Google Scholar
6. Mattox, D.M., J. Vac. Technol. A 7, 1105 (1989).Google Scholar
7. Mattox, D.M., j. Electrochem. Soc. 115, 1255 (1968).CrossRefGoogle Scholar
8. Winters, H. F., Raimondi, D.L., and Horne, D.E., j. Appl. Phys 40, 2996 (1969).Google Scholar
9. Winters, H.F. and Kay, E., j. Appl. Phys. 38, 3928 (1967).Google Scholar
10. Kornelsen, E.V., Can. J. Phys., 42, 364 (1964).CrossRefGoogle Scholar
11. Thornton, J.A., j. Vac. Sci. Technol. 11, 666 (1974).Google Scholar
12. Thornton, J.A., Annu. Rev. Mater. Sci. 7, 239 (1977).Google Scholar
13. Thornton, J.A., j. Vac. Sci. Technol. A4, 3059 (1986).Google Scholar
14. Movchan, B.A. and Demchishin, A.V., Phys. Met. Metallogr. 28, 83 (1969).Google Scholar
15. Thornton, J.A. and Hoffman, D.W., J. Vac. Sci. Technol. A3, 576 (1985).CrossRefGoogle Scholar
16. Messier, R., Giri, A.P., and Roy, R.A., J. Vac. Sci. Technol. A2, 500 (1984).CrossRefGoogle Scholar
17. Fountzoulas, C. and Nowak, W., J. Vac. Sci. Technol. A9, 2128 (1991).Google Scholar
18. Greene, J.E., Solid State Technol. 30, 115 (1987).Google Scholar
19. Kay, E., Parmigiani, F. and Parrish, W., J. Vac. Sci. Technol. A6, 3074 (1988).CrossRefGoogle Scholar
20. Coufal, H., Winters, H.F., Bay, H.L. and Eckstein, W., Phys. Rev. B44, 4744 (1991).Google Scholar
21. Winters, H.F., Coufal, H., Rettner, C.T., and Bethune, D.S., Phys. Rev. B41, 6240 (1990).CrossRefGoogle Scholar
22. Matsunami, N., Yamamura, Y., Itikawa, Y., Itoh, N., Kazumata, Y., Miyagawa, S., Morita, K., Shimizu, R., and Tawara, H., Atomic and Nuclear Data Tables v31, 1 (1984).CrossRefGoogle Scholar
23. Kay, E. and Winters, H.F., Transactions of the Third International Vacuum Congress, Vol. 2 (Pergamon Press, New York, London, 1965) p. 351 Google Scholar