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The Influence of Different Surface Terminations on Electrical Transport and Emission Properties for Freestanding Single Crystalline (100) CVD Diamond Samples

Published online by Cambridge University Press:  01 February 2011

Wim Deferme ,
Andrey Bogdan ,
Ken Haenen ,
Ward De Ceuninck ,
Kees Flipse  and
Milos Nesladek
Wim Deferme
Affiliation:
[email protected], Instituut voor MateriaalOnderzoek, WBGM, Wetenschapspark 1, Diepenbeek, 3590, Belgium
Andrey Bogdan
Affiliation:
[email protected], Hasselt University, Institute for Materials Research, Wetenschapspark 1, Diepenbeek, 3590, Belgium
Ken Haenen
Affiliation:
[email protected], Hasselt University, Institute for Materials Research, Wetenschapspark 1, Diepenbeek, 3590, Belgium
Ward De Ceuninck
Affiliation:
[email protected], Hasselt University, Institute for Materials Research, Wetenschapspark 1, Diepenbeek, 3590, Belgium
Kees Flipse
Affiliation:
[email protected], Eindhoven Univ. of Technology, Physics Department, Eindhoven, N/A, Netherlands
Milos Nesladek
Affiliation:
[email protected], Hasselt University, Institute for Materials Research, Wetenschapspark 1, Diepenbeek, 3590, Belgium
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Abstract

The surface density of states of hydrogen and oxygen terminated diamond is an important parameter from the point of view of electrical transport properties at the surface. In addition, the presence of surface states has a detrimental influence on the electrical contact properties. Therefore it is of great importance that the influence of different species on the surface-related properties of the diamond layer is well understood.

In this work (100)-oriented CVD diamond films are terminated using hydrogen plasma with and without small additions of oxygen (1 to 4%). XPS and UPS measurements are performed to look at the influence of this addition on the surface band gap of the diamond samples. Using the TOF (Time-of-Flight) technique a comparison is made between oxidised and differently hydrogenated diamond surfaces. The results clearly show that the different terminations of the diamond surface have an influence on the electrical transport properties. For the oxidised surface, it is found that defect states are created in the surface band gap, increasing trapping. Contrary to this, fully hydrogenated layers behave differently suggesting that the surface DOS is significantly reduced. This fact can be confirmed when applying an electric field on the CVD diamond samples sandwiched between two metallic electrical contacts. In case of a metal deposited on a hydrogen terminated surface we can see a clear UV light emission, related to free exciton recombination in the contact-diamond-junction region. When the surface is oxidised the UV emission is damped, an effect which is attributed to the parallel recombination channels via the surface states.

Keywords

diamondsurface reactionelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1039: Symposium P – Diamond Electronics–Fundamentals to Applications II , 2007 , 1039-P15-30
Copyright
Copyright © Materials Research Society 2008

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References

1. Miyata, K., Nishimura, K., Kobashi, K., IEEE Trans. ED. 42, 2010 (1995)Google Scholar
2. Umezawa, H., Taniuchi, H., Arima, T., Tachiki, M., Kawarade, H., Diamond Relat. Mater. 10, 1743 (2001)Google Scholar
3. Aleksov, A., Kubovic, M., Kaeb, N., Spitzberg, U., Bergmaier, A., Dollinger, G., Bauer, Th., Schreck, M., Stritzker, B., Kohn, E., Diamond and Related Materials 12, 391 (2003)10.1016/S0925-9635(02)00401-6Google Scholar
4. Takeuchi, D., Riedel, M., Ristein, J., Ley, L., Phys. Rev. B 68, 041304(R) (2003)Google Scholar
5. Ristein, J., Maier, F., Riedel, M., Cui, J.B., Ley, L., Phys. Stat. Sol. (a) 203, 3226 (2006)Google Scholar
6. Koizumi, S., Watanabe, K., Hasegawa, M., Kanda, H., Science 292, 1899 (2001)10.1126/science.1060258Google Scholar
7. Maier, F., Riedel, M., Mantel, B., Ristein, J., Ley, L., Physical Review Letters 85, 3472 (2000)Google Scholar
8. Deferme, W., Haenen, K., Tanasa, G., Flipse, C.F.J., Nesladek, M., Phys. Stat. Sol (a) 195, 3 (2003)Google Scholar
9. Bogdan, A., Bogdan, G., Ceuninck, W. De, Haenen, K., Nesladek, M., MRS Symp. Proc. 956, 0956–J09 (2007)Google Scholar
10. Deferme, W., Bogdan, A., Bogdan, G., Haenen, K., Ceuninck, W. De, Nesladek, M., Phys. Stat. Sol (a), 204, 3017 (2007)Google Scholar
11. Rezek, B., Sauerer, C., Nebel, C.E., Stutzmann, M., Ristein, J., Ley, L., Snidero, E., Bergonzo, P., Appl, Phys. Lett. 82, 2266 (2003)Google Scholar
12. Deferme, W., Tanasa, G., Amir, J., Haenen, K., Nesladek, M., Flipse, C.F.J., Diam. Relat. Mater. 15, 687 (2006)10.1016/j.diamond.2005.12.016Google Scholar
13. Okushi, H., Watanabe, H., Yamasaki, S., Kanno, S., Phys. Stat. Sol. (a) 203, 3226 (2006)Google Scholar