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Influence of Bottom Contact Material on the Selective Chemical Vapor Deposition of Crystalline GeSbTe Alloys

Published online by Cambridge University Press:  01 February 2011

Alejandro Schrott ,
Chieh-Fang Chen ,
Matthew J. Breitwisch ,
Eric A. Joseph ,
Ravi K Dasaka ,
Roger W. Cheek ,
Yu Zhu  and
Chung H Lam
Alejandro Schrott
Affiliation:
[email protected], IBM Research, Yorktown heights, New York, United States
Chieh-Fang Chen
Affiliation:
[email protected], Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsin-chu, Taiwan, Province of China
Matthew J. Breitwisch
Affiliation:
[email protected], IBM Research, Yorktown Heights, New York, United States
Eric A. Joseph
Affiliation:
[email protected], IBM Research, Yorktown heights, New York, United States
Ravi K Dasaka
Affiliation:
[email protected], United States
Roger W. Cheek
Affiliation:
[email protected], IBM Research, Yorktown Heights, New York, United States
Yu Zhu
Affiliation:
[email protected], IBM Research, Yorktown Heights, New York, United States
Chung H Lam
Affiliation:
[email protected], IBM, Research, 1101 Kitchawan Rd, PO Box 218, Yorktown Heights, New York, 10598, United States
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Abstract

Selective Chemical Vapor Deposition of Crystalline Ge-Sb-Te alloys initiating at the bottom metal contact of vias of various sizes has been accomplished. The method is based on selecting Sb and Te precursors which do not decompose on dielectric surfaces in the utilized temperature range.

Keywords

chemical vapor deposition (CVD) (deposition)nucleation & growthCMP
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H06-10
Copyright
Copyright © Materials Research Society 2010

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