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The Influence of an In-Situ Electric Field on H+ and He+ Implantation Induced Defects in Silicon

Published online by Cambridge University Press:  22 February 2011

J. Ravi ,
Yu. Erokhin ,
S. Koveshnikov ,
G.A. Rozgonyi  and
C.W. White
J. Ravi
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916
Yu. Erokhin
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916
S. Koveshnikov
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916
G.A. Rozgonyi
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916
C.W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057, USA.
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Abstract

The influence of in-situ electronic perturbations on defect generation during 150 keV proton implantation into biased silicon p-n junctions has been investigated. The concentration and spatial distribution of the deep traps were characterized using a modification of the double corelation deep level transient spectroscopy technique (D-DLTS). With the in-situ electric field applied, a decrease in concentration of vacancy-related, as well as H-related, traps was observed. 500 keV He+ implantation was also performed to supplement the above studies and to differentiate any passivation effects due to hydrogen. A model based on the charge states of hydrogen and vacancies was used to explain the observed behaviour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 105
Copyright
Copyright © Materials Research Society 1994

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References

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