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Influence of Ammoniating Temperatures on Microstructures, Morphologies and Optical Properties of GaN/Nb Nanostructures by RF Magnetron Sputtering Technique

Published online by Cambridge University Press:  18 May 2012

Feng Shi  and
Chengshan Xue
Feng Shi*
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, P.R.China, 250014
Chengshan Xue
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, P.R.China, 250014
*
*Corresponding author: Shi Feng, Tel & Fax: +86 531 86182521, Email:[email protected]
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Abstract

GaN nanowires and nanorods have been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga2O3/Nb thin films and the effects of ammoniation temperatures on growth of GaN nanowires and nanorods were analyzed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra were carried out to characterize microstructures, morphologies, and optical properties of GaN samples. The results demonstrate that sample after ammoniation at 950 °C is single crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 30 - 80 nm in diameter. After ammoniation at 1000 °C, GaN nanorods appear with smooth and clean surface and more than 100 nm in diameter. The optical properties of GaN nanowires grown at 950 °C and nanorods grown at 1000 °C are best with strong emission intensities.

Keywords

nanostructuresputteringluminescence
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes—Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 17 - 23
Copyright
Copyright © Materials Research Society 2012

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References

Yoo, J., Hong, Y.J., An, S.J., et al. . Appl.Phys.Lett.,89, 043124 (2006).CrossRefGoogle Scholar
Motayed, A., Davydov, A.V., Vaudin, M.D., et al. . J.Appl. Phys.,100, 024306 (2006).CrossRefGoogle Scholar
Han, W., Redlich, P., Ernst, F., et al. . Appl. Phys. Lett., 76, 652-654 (2000)CrossRefGoogle Scholar
Han, W., Li, Q and Zettl, A.. Appl. Phys. Lett., 80, 303–305 (2002).CrossRefGoogle Scholar
Xu, B.S., Zhai, L.Y., Liang, J., et al. . J. Cryst. Growth., 291, 34–39 (2006).CrossRefGoogle Scholar
Li, J. Y., Chen, X. L., Qiao, Z.Y., et al. . J. Cryst. Growth., 213, 408–410 (2000).CrossRefGoogle Scholar
Li, B.L., Zhang, H.Z., Xue, C.S., et al. . J. Alloys Compd., 448, 368–371 (2008).CrossRefGoogle Scholar
Zhang, H.Z., Li, B.L., Xue, C.S., et al. .Vaccum, 82, 1224–1228 (2008).CrossRefGoogle Scholar
Zhang, H.Z., Li, B.L., Xue, C.S., et al. . Microelectron.J., 39, 1629–1633 (2008).CrossRefGoogle Scholar
Li, B.L., Zhang, H.Z., Xue, C.S., et al. . Solid State Comm.,145, 520–524 (2008).CrossRefGoogle Scholar
Li, B.L., Zhang, H.Z., Xue, C.S., et al. . Superlattice. Microst., 43, 262–267(2008).CrossRefGoogle Scholar
Perlin, P., Jauberthie-Carillon, C., Itie, J.P., et al. . Phys.Rev., B 45, 83–89(1992).CrossRefGoogle Scholar
Yang, Y.G., Ma, H.L., Xue, C.S., et al. . Appl. Surf. Sci., 193254–260(2002).Google Scholar
Li, D., Sumiys, M., Fuke, S.. J. Appl. Phys., 90, 4219–4223(2001).CrossRefGoogle Scholar
Elkashef, N., Srinivasa, R.S., Major, S., et al. . Thin Solid Films, 333,9–12(1998).CrossRefGoogle Scholar
Kingsley, C.R., Whitaker, T.J., Wee, A.T.S., et al. . Mater.Sci.Eng. B, 29,78–82(1995).CrossRefGoogle Scholar
Sasaki, T., Matsuoka, T., J. App. Phys., 64, 4531–4535(1998).CrossRefGoogle Scholar
Ishikawa, H., Kobayashi, S., Koide, Y., et al. . J. Appl. Phys., 81, 1315–1322(1997).CrossRefGoogle Scholar
Veal, T. D., Mahboob, I., Piper, L.F.J., et al. . Appl. Phys. Lett., 85, 1550–1552(2004).CrossRefGoogle Scholar
King, S.W., Carlson, E.P., Therrien, R.J.. J. Appl. Phys., 86, 5584–5593(1999).CrossRefGoogle Scholar
Monemar, B.. Phys. Rev., B 10,676–681 (1974).CrossRefGoogle Scholar
Amanullah, F.M., Pratap, K.J., Hari, V.B., Mater.Sci.Eng.B 52,93–97(1998).CrossRefGoogle Scholar
Xue, C, Wu, Y, Zhuang, H, et al. . Physica E, 30,179–181(2005).CrossRefGoogle Scholar
Monemar, B., Phys. Rev, B 10,676–681(1974).CrossRefGoogle Scholar
Wang, S.Y., Sun, Z.C., Cao, W.T., et al. . J.Instru. Ana., 23,65–68(2004).Google Scholar