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The Infidence of Defect Concentrations on Migration Energies in AgZn Alloys

Published online by Cambridge University Press:  25 February 2011

T. D. Andreadis ,
M. Rosen ,
J. M. Eridon  and
D. J. Rosen
T. D. Andreadis
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000.
M. Rosen
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000.
J. M. Eridon
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000.
D. J. Rosen
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000.
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Abstract

Migration energies in Ag of vacancies, interstitials, Zn impurity atoms, interstitial-iipurity cumplexes, and vacancy-impurity complexes were calculated using Embedded Atom. Method (EAM) potentials in Molecular Statics calculations. A new Zn EAM potential was determined and used in these calculations. The dependence of the migration energies on local defect concentrations was determined in a linear approximation. Binding and formation energies of defects are also presented. A new model for the migration energy appropriate for defect reactions is introduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 175
Copyright
Copyright © Materials Research Society 1989

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References

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