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Inert Gas Dilution and Ion Bombardment Effects in Room Temperature (35°C) Plasma Deposition of a-Si:H

Published online by Cambridge University Press:  10 February 2011

Easwar Srinivasan ,
Daniel A. Lloyd ,
Ming Fang  and
Gregory N. Parsons
Easwar Srinivasan
Affiliation:
Department of Chemical Engineering, N.C. State University, Raleigh, NC, 27695
Daniel A. Lloyd
Affiliation:
Department of Chemical Engineering, N.C. State University, Raleigh, NC, 27695
Ming Fang
Affiliation:
Department of Chemical Engineering, N.C. State University, Raleigh, NC, 27695
Gregory N. Parsons
Affiliation:
Department of Chemical Engineering, N.C. State University, Raleigh, NC, 27695
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Abstract

Plasma enhanced chemical vapor deposition (PECVD) of a-Si:H with silane or silane and hydrogen at temperatures lower than 200°C commonly results in films with significant dihydride bonding and a high defect density. In this paper, we demonstrate the formation of monohydride dominant a-Si:H films using rf parallel plate PECVD at 35°C at deposition rates greater than 100 Å/min. In the as-deposited state, these films have low dark conductivity (∼10−9 S/cm) and low photoconductivity. Annealing the films at 150°C caused the monohydride dominant films to show photo to dark conductivity ratio near 105. Our results also indicate that an increase in monohydride fraction is not linked with a decrease in deposition rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 399
Copyright
Copyright © Materials Research Society 1996

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