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Indium Tin Oxide Films Formation by Laser Ablation

Published online by Cambridge University Press:  22 February 2011

J.P. Zheng  and
H.S. Kwok
J.P. Zheng
Affiliation:
Department of Electrical and Computer Engineering State University of New York ar Buffalo Amherst, New York 14260
H.S. Kwok
Affiliation:
Department of Electrical and Computer Engineering State University of New York ar Buffalo Amherst, New York 14260
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Abstract

The electrical and optical properties of room temperature laser deposited indium tin oxide films were studied. It was found that the resistivity of the film was quite sensitive to the deposition conditions. At the optimized conditions, films with a bulk resistivity value of 2.8×10−4 Ω-cm and optical transmission of greater than 90% could be obtained. By using an in situ resistance measurement, it was shown that the initial growth mode was via island formation. Additionally, a classic transition from two- to three-dimensional behavior for the resistance was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 353
Copyright
Copyright © Materials Research Society 1994

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