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Index of Refraction and Strain Induced Birefringence of Pseudomorphic Si1−xGex

Published online by Cambridge University Press:  10 February 2011

S. Mailhot ,
J. M. Baribeau ,
D. M. Bruce ,
A. Delâge ,
S. Janz ,
P. E. Jessop ,
H. Lafontaine ,
M. Robillard ,
R. L. Williams  and
D. X. Xu
S. Mailhot
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
J. M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
D. M. Bruce
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
A. Delâge
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
S. Janz
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
P. E. Jessop
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
H. Lafontaine
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
M. Robillard
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
R. L. Williams
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
D. X. Xu
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
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Abstract

The index of refraction of pseudomorphic layers grown on Si has been determined at wavelengths λ=1330 nm and λ= 1550 nm, for Ge concentrations between x=0.01 and x=0.1. The refractive index values were obtained from mode profile measurements on a series of Si1−xGex waveguides. The index of refraction is significantly larger for light polarized parallel to the growth direction than for light polarized in the plane of the epilayer. This birefringence is consistent with the anisotropic index change predicted using photoelelastic theory, given the biaxial strain present in the pseudomorphic Si1−xGex layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 101
Copyright
Copyright © Materials Research Society 1998

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