Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T01:53:52.619Z Has data issue: false hasContentIssue false
  • English
  • Français

Inas Nanostructures in a Silicon Matrix: Growth and Properties

Published online by Cambridge University Press:  10 February 2011

G. E. Cirlin ,
V. A. Egorov ,
V. N. Petrov ,
A. O. Golubok ,
N. I. Komyak ,
N. K. Polyakov ,
Yu. B. Samsonenko ,
D. V. Denisov ,
B. V. Volovik  and
V. M. Ustinov
...Show all authors
G. E. Cirlin
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
V. A. Egorov
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia
V. N. Petrov
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia
A. O. Golubok
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia
N. I. Komyak
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia
N. K. Polyakov
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
Yu. B. Samsonenko
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
D. V. Denisov
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
B. V. Volovik
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
V. M. Ustinov
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
Zh. I. Alferov
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
N. N. Ledentsov
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia Technical University, Berlin, Germany
R. Heitz
Affiliation:
Technical University, Berlin, Germany
D. Bimberg
Affiliation:
Technical University, Berlin, Germany
N. D. Zakharov
Affiliation:
Max-Plank-Institute for Microstructure Physics, Halle/Saale, Germany, 007-812-2479350, 007-812-2517038, [email protected]
P. Werner
Affiliation:
Max-Plank-Institute for Microstructure Physics, Halle/Saale, Germany, 007-812-2479350, 007-812-2517038, [email protected]
U. Gösele
Affiliation:
Max-Plank-Institute for Microstructure Physics, Halle/Saale, Germany, 007-812-2479350, 007-812-2517038, [email protected]
Get access

Abstract

Under certain growth conditions InAs/Si heteroepitaxial growth proceeds via Stranski-Krastanow or Volmer-Weber growth modes depending on the growth parameters. Critical thickness at which three dimensional InAs islands start to appear at the Si(100) surface is within the range of 0.7 - 4.0 monolayers (substrate temperature range is 350°C - 430 °C). Their size depends critically on the growth conditions and is between 5 nm and 80 nm (uncapped islands). Critical lateral size of the coherent (Si capped) dislocation-free island is equal to 2 - 5 nm depending on the island height. Islands having larger size are dislocated. Optical properties of InAs nanoscale islands capped with Si reveal a luminescence band in the 1.3 μm region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 51
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Goldstein, L., Glas, F., Marzin, J.Y., Charasse, M.N., and Roux, G. Le, Appl.Phys.Lett. 47, p.1099 (1985).Google Scholar
2.Leonard, D., Krishnamurthy, M., Reaves, C.M., Denbaars, S.P., and Petroff, P.M., Appl.Phys.Lett. 63, p.3203 (1993).Google Scholar
3.Strassburg, M., Kutzer, V., U Pohl, W., Hoffmann, A., Broser, I., Ledentsov, N.N., Bimberg, D., Rosenauer, A., Fischer, U., Gerthsen, D., Krestnikov, I.L., Maximov, M.V., P.S. Kop'ev, and Zh.I. Alferov. Appl. Phys. Lett. 72, p. 942 (1998).Google Scholar
4. Feng Liu and Lagally, M.G., Surf Sci. 386, p. 169 (1997).Google Scholar
5.Ledentsov, N.N. in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, July 21–26, 1996, edited by Scheffler, M. and R., Zimmermann, World Scientific, Singapoure, 1996, 1, p. 19–24.Google Scholar
6.Gerard, J.M., Cabrol, O., and Sermage, B., Appl.Phys.Lett. 68, p.3123 (1996).Google Scholar
7.Ishisaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, p. 6 66 (1986).Google Scholar
8.Cirlin, G.E., Guryanov, G.M., Golubok, A.O., Tipissev, S. Ya., Ledentsov, N.N., Kop'ev, P.S., Grundmann, M. and Bimberg, D., Appl. Phys. Lett. 67, p.97 (1995).Google Scholar
9. G.M. Gur'yanov, Demidov, V.N., Korneeva, N.P., Petrov, V.N., Yu. Samsonenko, B., and Tsyrlin, G.E.. Tech.Phys. 42, p.956 (1997).Google Scholar
10.Cirlin, G.E., Petrov, V.N., Dubrovskii, V.G., Masalov, S.A., Golubok, A.O., Komyak, N.I., Ledentsov, N.N., Alferov, Zh. I., and Bimberg, D., Tech.Phys.Lett. 24, p.290 (1998).Google Scholar
11.Mano, T., Fujioka, H., Ono, K., Watanabe, Y., and Oshima, M.. Appl.Surf.Sci. 130–132, p. 760 (1998).Google Scholar
12.Sharma, P.C., Alt, K.W., Yeh, D.Y., and Wang, K.L., Appl. Phys. Lett. 75, p. 1273 (1999).Google Scholar
13.Cirlin, G.E., Dubrovskii, V.G., Petrov, V.N., Polyakov, N.K., Korneeva, N.P., Demidov, V.N., Golubok, A.O., Masalov, S.A., Kurochkin, D.V., Gorbenko, O.M., Komyak, N.I., Ustinov, V.M., Egorov, A. Yu., Kovsh, A.R., Maximov, M.V., Tsatsul'nikov, A.F., Volovik, B.V., Zhukov, A.E., Kop'ev, P.S., Alferov, Zh. I., Ledentsov, N.N., Grundmann, M., and Bimberg, D.. Semicond.Sci.Technol. 13, p. 1262 (1998).Google Scholar
14.Cyrlin, G.E., Petrov, V.N., Dubrovskii, V.G., Samsonenko, Yu. B., Polyakov, N.K., Golubok, A.O., Masalov, S.A., Komyak, N.I., Ustinov, V.M., Yu, A.. Egorov, Kovsh, A.R., Maximov, M.V., Tsatsul'nikov, A.F., Volovik, B.V., Zhukov, A.E., Kop'ev, P.S., Ledentsov, N.N., Alferov, Zh. I., and Bimberg, D., Semiconductors 33, p. 972 (1999).Google Scholar
15.Cirlin, G.E., Polyakov, N.K., Petrov, V.N., Egorov, V.A., Yu. Samsonenko, B., Denisov, B.V., Busov, V.M., Volovik, B.V., Ustinov, V.M., Alferov, Zh. I., Ledentsov, N.N., Bimberg, D., Zakharov, N.D., and Werner, P., Czeck.J. Phys. 49, p. 15 47 (1999).Google Scholar
16.Heitz, R., Ledensov, N. N., Bimberg, D., Yu, A.. Egorov, Maximov, M.V., Ustinov, V.M., Zhukov, A.E., Alferov, Zh. I., Cirlin, G.E., Soshnikov, I.P., Zakharov, N.D., Werner, P., and Gosele, U., Appl. Phys. Lett. 74, p. 1701 (1999).Google Scholar
17. InAs critical thickness for both samples was exceeded by the value of 0.8 ML.Google Scholar
18.Zakharov, N.D., Werner, P., Heitz, R., Ledensov, N. N., Bimberg, D., Ustinov, V.M., Volovik, B.V., Alferov, Zh. I., Polyakov, N.K., Petrov, V.N., Egorov, V.A., and Cirlin, G.E., to be published 0583–0057Google Scholar