Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-15T17:56:12.107Z Has data issue: false hasContentIssue false

In Situ Tem Study of Reactions in Iron/amorphous Carbon Layered Thin Films

Published online by Cambridge University Press:  15 February 2011

Toshio Itoh
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Get access

Abstract

Reactions between Fe and amorphous carbon (a-C) below 600ºC have been investigated. In situ annealing in a transmission electron microscopy (TEM) was performed on a-C/Fe/a-C trilayer films deposited by DC sputtering. As-deposited films showed a well defined tri-layered structure and an average Fe grain size of about 50Å. Cementite (Fe3C) grains appeared in the Fe layer by annealing around 300ºC. As the annealing temperature was raised, the number and size of the cementite grains increased. When the annealing temperature reached 500ºC, the Fe layer completely turned into cementite with an average grain size of 1000Å. At this point the film still kept a well defined tri-layered structure even though some parts of the cementitelayer agglomerated. Above 500ºC, the cementite layer started to “move” into the a-C leaving graphite behind. Graphite formed in this process is strongly textured with the (0002) graphite basal planes parallel to the surface of the moving cementite. This process is concluded to be carbide mediated crystallization of a-C, similar to silicide mediated crystallization of silicon in Ni-Si and Pd-Si systems.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Acheson, E.G., U.S. Patent No. 568 323 (1896).Google Scholar
2. Presland, A.E.B. and Walker, P.L., Carbon 7, 1 (1969).Google Scholar
3. Strong, H.M., J. Chem. Phys. 39,2057 (1963).Google Scholar
4. Lamber, R. et al. , Surface Science 197, 402 (1988).Google Scholar
5. Nguyen, T.D. et al. , in Thin Film Structure and Phase Stability edited by Clemens, B.M. and Johnson, W.L. (Mater. Res. Soc. Proc. 187, Pittsburgh, PA, 1990) pp. 95.Google Scholar
6. Jiang, Z. et al. , J. Appl. Phys. 72, 931 (1992).Google Scholar
7. Iijima, S. and Ichihashi, T., Nature (London) 363, 603 (1993).Google Scholar
8. Fischbach, D.B., in Chemistry and Physics of Carbon Volume 7. edited by Walker, P.L. (Marcel Dekker, New York, 1971) pp. 1.Google Scholar
9. Holstein, W.L. et al. , in Chemistrv and Physics of Carbon Volume 18 edited by Thrower, P.A. (Marcel Dekker, New York, 1982) pp. 139.Google Scholar
10. Itoh, T. and Sinclair, R., in Noble Forms of Carbon II edited by Renschler, C.L., Cox, D.M. Pouch, J.J. and Achida, Y. (Mater. Res. Soc. Proc. 349, Pittsburgh, PA, 1994) pp. 31.Google Scholar
11. Konno, T.J. and Sinclair, R., Acta Metall. Mater. 43,471 (1995).Google Scholar
12. Konno, T.J. and Sinclair, R., Phil. Mag. B66,749 (1992).Google Scholar
13. Konno, T.J. and Sinclair, R., Mater. Sci. Eng. A179/A180, 426 (1994).Google Scholar
14. Sinclair, R. and Konno, T.J., in Phase Transformations in Thin Films edited by Atzmon, M. et al. (Mat. Res. Soc. Proc. 311, Pittsburgh, PA, 1993) pp. 3.Google Scholar
15. Konno, T. J. and Sinclair, R., ibid., pp. 99.Google Scholar
16. Hayzelden, C. and Batstone, J.L., J. Appl. Phys. 73, 8279 (1993).Google Scholar
17. Lau, S.S. and Weg, W.F. van der, in Thin Films - Interdiffusion and Reactions edited by Poate, J.M., Tu, K.N. and Mayer, J.W. (Wiley, New York 1978) pp. 433.Google Scholar
18. Bravman, J. and Sinclair, R., J. Electron Microscopy Technique 1, 53 (1984).Google Scholar