Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-19T05:07:11.610Z Has data issue: false hasContentIssue false
  • English
  • Français

In situ TEM Observations of Grain Growth in Nanograined Thin Films

Published online by Cambridge University Press:  01 February 2011

K. Hattar ,
J. Gregg ,
J. Han ,
T. Saif  and
I. M. Robertson
K. Hattar
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801
J. Gregg
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801
J. Han
Affiliation:
Department of Mechanical and Industrial Engineering, University of Illinois, Urbana IL 61801
T. Saif
Affiliation:
Department of Mechanical and Industrial Engineering, University of Illinois, Urbana IL 61801
I. M. Robertson
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801
Get access

Abstract

In situ transmission electron microscopy analysis is used to study the stability of nanograined and ultra-fine grained thin films at elevated temperatures. In the free-standing Au and Cu films, grain growth was dependent on annealing temperature and time with growth observed in both materials at temperatures greater than 373K. Both materials exhibited abnormal grain growth although it was more prevalent in Au than in Cu, which may be a consequence of pinning of the Cu grain boundaries by impurities. The formation and destruction of twins was observed to play a critical role in the grain growth, with the twins retarding the growth in gold, but not in Cu. In constrained Au films no grain growth was observed on annealing at temperatures below 636 K. At 636 K, the eutectic temperature, the microstructure transformed to the eutectic structure with the first stage being the annihilation of the grain structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U6.6
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thompson, C. V., Annu. Rev. Mater. Sci. 30, 159 (2000).Google Scholar
2. Liu, F. and Kirchheim, R., Thin Solid Films 466 (1–2), 108 (2004)Google Scholar
3. Twardowski, M. and Nuzzo, R. G., Langmuir 18, 5529 (2002).Google Scholar
4. Rios, P. P., Mater. Sci. For. 204–206, 247 (1996).Google Scholar
5. Yamasaki, T., Demizu, Y., Ogo, Y., Mater. Sci. For. 204–206, 461 (1996)Google Scholar
6. Huang, M., Wang, Y., Chang, Y.A., Thin Solid Films 449, 113 (2004)Google Scholar
7. Dannenberg, R., Stach, E.A., Groza, J.R., Dresser, B.J., Thin Solid Films 370, 54 (2000)Google Scholar
8. Haslam, A. J., Phillpot, S. R., Wolf, D., Moldovan, D., Gleiter, H., Materials Science and Engineering A 318, 293 (2001).Google Scholar
9. Kwon, J.-Y., Yoon, T.-S., Kim, K.-B., J. Appl. Phys. 93 (6), 3270 (2003).Google Scholar
10. Lee, S.-Y., Choi, S.-H., Park, C.-O., Thin Solid Films 359, 261 (2000).Google Scholar
11. Lee, S.-Y., Choi, S.-H., Park, C.-O., J. Appl. Phys. 88 (10), 5946 (2000).Google Scholar
12. Yang, C.-Y., Jeng, J.S., Chen, J.S., Thin Solid Films 420–421, 398 (2002).Google Scholar
13. Yang, C.-Y., Chen, J.S., J. Electrochem. Soc. 150 (12), G826-G830 (2003)Google Scholar
14. Hattar, K., Han, J. H., Saif, T. A., Robertson, I. M. (unpublished)Google Scholar