Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T19:10:25.883Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ TEM Investigation of Abnormal Grain Growth in Nanocrystalline Nickel

Published online by Cambridge University Press:  26 February 2011

David M. Follstaedt ,
Khalid Hattar ,
James A. Knapp  and
Ian M. Robertson
David M. Follstaedt
Affiliation:
[email protected], Sandia National Laboratories, 01111, MS 1056, Albuquerque, NM, 87185-1056, United States, (505) 844-2102, (505) 844-7775
Khalid Hattar
Affiliation:
[email protected], University of Illinois, Materials Science and Engineering, United States
James A. Knapp
Affiliation:
[email protected], Sandia National Laboratories, 01111, United States
Ian M. Robertson
Affiliation:
[email protected], University of Illinois, Materials Science and Engineering, United States
Get access

Abstract

In situ transmission electron microscopy was used to show that nanocrystalline nickel produced by pulsed-laser deposition undergoes abnormal grain growth at moderate temperatures (225-400°C). The growth rate was found to increase with thickness for the three film thicknesses examined, 50, 80 and 150 nm. The abnormal growth proceeded in an irregular manner: initiation sites and growth direction were unpredictable, and the grains exhibited no preferred orientation. Some abnormal grains show internal boundaries such as twins, while others exhibited lattice misalignments across the grain body. The grains contain many defects, including dislocations, stacking faults and surprisingly, stacking fault tetrahedra. The stacking fault tetrahedra are not a result of quenching nor of electron irradiation-induced lattice displacements; they instead are thought to form from vacancies trapped in the growing grain as it incorporates lower-density material at the high-angle grain boundaries in the nanocrystalline matrix.

Keywords

nanostructuretransmission electron microscopy (TEM)grain size
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 907: Symposium MM – In-Situ Electron Microscopy of Materials , 2005 , 0907-MM06-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Becker, E. W., Ehrfeld, W., Hagmann, P., Maner, A., Munchmeyer, D., Microelectron. Engr. 4, 35 (1986).Google Scholar
2 Knapp, J. A. and Follstaedt, D. M., J. Mater. Res. 19, 218 (2004).Google Scholar
3 Hugo, R. C., Kung, H., Weertman, J. R., Mitra, R., Knapp, J. A. and Follstaedt, D. M., Acta Mater. 51, 1937 (2003).Google Scholar
4 Shan, Z., Stach, E. A., Wiezorek, J. M. K., Knapp, J. A., Follstaedt, D. M. and Mao, S. X., Science 305, 654 (2004).Google Scholar
5 Rios, P. R., Mater. Sci. Forum 204–206, 247 (1996).Google Scholar
6 Seel, S. C., Carel, R., Mater. Res. Soc. Symp. Proc. 403, 63 (1996).Google Scholar
7 Thompson, C. V. and Carel, R., Mater. Sci. forum 204–206, 83 (1996).Google Scholar
8 Watanabe, T., Scr. Metall. 21, 427 (1987).Google Scholar
9 Nabarro, F. R. N., Scr. Mat. 39, 1681 (1998).Google Scholar
10 Greiser, J., Mullner, P. and Arzt, E., Acta Mat. 49, 1041 (2001).Google Scholar
11 Klement, U., Erb, U., El-Sherik, A.M. and Aust, K. T., Mater. Sci. Eng. A 203, 177 (1995).Google Scholar
12 Gottstein, G., Czubayko, U., Molodov, D. A., Shvindlerman, L. S. and Wunderlich, W., Mater. Sci. Forum 204–206, 99 (1996).Google Scholar
13 Twardowski, M. and Nuzzo, R.G., Langmuir 18, 5529 (2002).Google Scholar
14 Hibbard, G. D., McCrea, J. L., Palumbo, G., Aust, K. T. and Erb, U., Scr. Mat. 47, 83 (2002).Google Scholar
15 This website will be maintained for 2 years following the publication of this manuscript.Google Scholar
16 Williams, D. B. and Carter, C. B., Transmission Electron Microscopy : A Textbook for Materials Science (Plenum Press, New York, 1996). See p. 62 (beam heating), p. 62 (atomic displacements).Google Scholar
17 Hirth, J. P. and Lothe, J., Theory of Dislocations (Krieger Publishing Co., Malabar, FL, 1992), p. 332 (stacking fault tetrahedral), and p. 839 (stacking fault energies).Google Scholar
18 Sigle, W., Jenkins, M. L. and Hutchison, J. L., Phil. Mag. Lett. 57, 267 (1988).Google Scholar
19 Kiritani, M., Mater. Chem. Phys. 50, 1333 (1997).Google Scholar
20 Schumacher, D., Zeit. Angewand. Phyz. 26, 380 (1969).Google Scholar
21 Seeger, A. and Schumacher, D., in Lattice Defects in Quenched Metals, eds. Cotterill, R. M. J, Doyama, M., Jackson, J. J. and Meshii, M. (Academic Press, New York, 1965), p. 54.Google Scholar
22 Van Petegem, S., Torre, F. Dalla, Segers, D. and Van Swygenhoven, H., Scr. Mat. 48, 17 (2003).Google Scholar
23 Sutton, A. P. and Balluffi, R. W., Interfaces in Crystalline Materials (Oxford Univ. Press, Oxford, 1996).Google Scholar
24 Gregg, J. A., Hattar, K., Lei, C. H. and Robertson, I. M., proceedings of the Materials Research Society, Fall 2005, elsewhere in this volume.Google Scholar
25 Dannenberg, R., Stach, E. A., Groza, J. R. and Dresser, B. J., Thin Solid Films 370, 54 (2000).Google Scholar