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In Situ Tem Analysis of TiSi2 C49-C54 Transformations During Annealing

Published online by Cambridge University Press:  10 February 2011

L. M. Gignac
Affiliation:
IBM-T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
V. Svilan
Affiliation:
IBM-T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
L. A. Clevenger
Affiliation:
IBM-T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
C. Cabral Jr.
Affiliation:
IBM-T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
C. Lavoie
Affiliation:
IBM-T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

In situ transmission electron microscope (TEM) observations of TiSi2 C49-to-C54 phase transformations were recorded on video tape and photographic negatives, and transformation front velocities (vTF) were measured from the data. The samples studied in this work include: C49-TiSi2 blanket films and 0.2 μm wide, 7 mm long lines on undoped poly-Si and 0.13 μm wide, 10 μm long lines on either B- or As-doped poly-Si. The in situ TEM analysis showed that blanket TiSi2 films on undoped poly-Si fully transformed at 830°C and had an average vTF of 0.5 ± 0.2 μm/s. The transformation occurred from a sparse nucleation density of ˜0.1 site/μm2. The 0.2 μm wide lines transformed at temperatures greater than 885°C, and the average vTF was 1.1 ± 0.2 μm/sec. Agglomeration started for both the blanket film and the 0.2 μm wide lines at temperatures above 900°C. In situ x-ray diffraction (XRD) analyses of C49-TiSi2 on B- and As-doped poly-Si showed that blanket films completely transformed to C54-TiSi2 at T = 835–843°C, but 0.13 μm wide, varying length lines did not fully transform, even when rapid thermal annealed to 1025°C. From in situ TEM analysis of 0.13 μm wide, 10 μm long C49-TiSi2 lines on B-doped poly-Si, a distinct transformation was not observed. Instead, the lines slowly agglomerated, and electron diffraction of the agglomerated regions showed that the film had transformed to C54-TiSi2. An individual line either 1) completely transformed and agglomerated or 2) remained as C49-TiSi2 and did not agglomerate. Approximately 85% of all lines transformed. In situ TEM analysis of 0.13 μm wide, 10 μm long lines of C49-TiSi2 on As-doped poly-Si also showed an indistinct transformation to the C54 phase along with agglomeration, and 100% of the lines transformed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Maex, K., Mater. Sci. & Eng. R11, 53 (1993).Google Scholar
2. Lasky, J.B., Nakos, J.S., Cain, O.J., and Geiss, P.J., IEEE Trans. Electron Devices 38, 262 (1991).Google Scholar
3. Agnello, P.D. and Fink, A., J. Electron. Mater. 22, 661 (1993).Google Scholar
4. Ganin, E., Wind, S., Ronsheim, P., Yapsir, A., Barmak, K., Bucchignano, J., and Assenza, R. in Rapid Thermal and Integrated Processing II, edited by Gelpey, J.C., Elliott, J.K., Wortman, J.J., and Ajmera, A. (Mat. Res. Soc. Proc. 303, Pittsburgh, PA, 1993) 109.Google Scholar
5. Clevenger, L.A., Roy, R.A., Cabral, C. Jr., Saenger, K.L., Brauer, S., Morales, G., Ludwig, K.F. Jr., Gifford, G., Bucchignano, J., Jordan-Sweet, J., DeHaven, P., and Stephenson, G.B., J. Mater. Res. 10, 2355 (1995).Google Scholar
6. Roy, R.A., Clevenger, L.A., Cabral, C. Jr., Saenger, K.L., Brauer, S., Jordan-Sweet, J., Bucchignano, J., Stephenson, G.B., Morales, G., and Ludwig, K.F. Jr., Appl. Phys. Lett. 66, 1732 (1995).Google Scholar
7. Roy, R.A., Clevenger, L.A., Cabral, C. Jr., Lavoie, C., Saenger, K.L., Jordan-Sweet, J., Pomerene, A., Viswanathan, R., Harper, J.M.E., and Stephenson, G.B., to be published.Google Scholar
8. Mann, R., private communication.Google Scholar
9. Gignac, L.M., Cunningham, B., Palmer, L.F., and Miller, J.A. in Advances and Applications in the Metallography and Characterization of Materials and Microelectronic Components, edited by Stevens, D.W., Clark, E.A., Zipperian, D.C. and Albrecht, E.D. (Intl. Metal. Soc. Proc. 1996) 285.Google Scholar
10. Svilan, V., Rodbell, K.P., Clevenger, L.A., Cabral, C. Jr., Roy, R.A., Lavoie, C., Jordan-Sweet, J. and Harper, J.M.E. presented at Thin Films-Stresses and Mechanical Properties VI (Mat. Res. Soc., 436, 1996) in press.Google Scholar
11. Svilan, V., M.E.E. thesis, Massachusetts Institute of Technology, 1996.Google Scholar
12. Tanaka, H., Hirashita, N., and Sinclair, R., Jap. J. Appl. Phys. (Lett) 35, L479 (1996).Google Scholar
13. Raaijmakers, I.J.M.M., Ph.D. Thesis, Technical University at Eindhoven, Netherlands, 1988.Google Scholar
14. Colgan, E. G., Clevenger, L.A., and Cabral, C. Jr., Appl. Phys. Lett. 65, 2009 (1994).Google Scholar
15. Clevenger, L.A., Mann, R.W., Roy, R.A., Saenger, K. L., Cabral, C. Jr., and Piccirillo, J., J. Appl. Phys. 76, 7874 (1994).Google Scholar
16. Park, H.K., Sachitano, J., McPherson, M., Yamaguchi, T., and Lehman, G., J. Vac. Sci. Technol. A 2, 264 (1984).Google Scholar
17. Beyers, R., Coulman, D., and Merchant, P., J. Appl. Phys. 61, 5110 (1987).Google Scholar
18. Chittipeddi, S., Dziuba, C.M., Kelly, M.J., Kannan, V.C., Irwin, R.B., Kahora, P.M., and Cochran, W.T., Mat. Res. Soc. Proc. 260, 207 (1992).Google Scholar
19. Miles, G.L., Mann, R.W., and Bertsch, J.E., Thin Solid Films, in press.Google Scholar