Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:12:35.336Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ Study of Stresses Generated During the Formation of Cobalt Disilicide and the Effect of Post Silicide Processing

Published online by Cambridge University Press:  16 February 2011

A. R. Sitaram ,
J. C. Kalb Jr.  and
S. P. Murarka
A. R. Sitaram
Affiliation:
now with APRDL, Motorola Inc., 3501, Ed Bluestein Boulevard, Austin, TX 78721.
J. C. Kalb Jr.
Affiliation:
now with Cypress Semiconductor, 3901, N. First Street, San Jose, CA 95134.
S. P. Murarka
Affiliation:
Materials Engineering Department/CIE, Rensselaer Polytechnic Institute, Troy, NY 12180.
Get access

Abstract

Self aligned cobalt disilicide technology is emerging as an excellent choice for gate and interconnection and contact metallization in VLSI. The presence of an as deposited, intrinsic stress in the cobalt film and the generation of stresses during its subsequent reaction with the underlying silicon and during post silicide processing can affect the mechanical stability and the performance of the overall device structure. This study involved the in situ observation of the stresses generated in thin films of cobalt (or silicide formed on reaction) on silicon as they react during a continuously ramped and cooled temperature cycle. The results will be presented, and in the light of a well characterized reaction sequence, possible governing mechanisms will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 67
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Campbell, D.S., in “Handbook of Thin Film Technology”, eds. Maissel, L.I. and Glang, R., McGraw Hill, New York (1983), p. 12.3.Google Scholar
2. Hoffman, R.W., “Physics of Thin Films”, Vol.3, eds. Hess, G. and Thun, R.E., Academic (1966), p.211.Google Scholar
3. Thornton, J.A., in “Semiconductor Materials and Process Technology Handbook”, ed. McGuire, G.E., Noyes, Park Ridge, NJ (1988), p.329.Google Scholar
4. Kinosita, K., “Proc. Second Colloquium on Thin Films”, ed. Hahn, E., Vanderhoek and Ruprecht, Gottingen (1967), p.31.Google Scholar
5. d'Huerle, F.M. and Harper, J.M.E., Thin Solid Films, 171, 81 (1989).Google Scholar
6. Samsonov, G.V. and Vinitskii, J.M., “Handbook of Refractory Compounds”, IFI/Plenum, New York (1980).Google Scholar
7. Murarka, S.P., “Silicides for VLSI Applications”, Academic (1983), p.60.Google Scholar
8. Murarka, S.P. and Lloyd, E.J., Unpublished.Google Scholar
9. Murarka, S.P. and Vaidya, S., J. Appl. Phys., 56(12), 3404 (1984).Google Scholar
10. Hove, L. Van den, Hellemont, J. Van, Wolters, R., Claassen, W., Keersmaecker, R. De, and Declerck, G., in “Proc. 1st Symp. on Advanced Materials for ULSI”, eds. Scott, M., Akasaka, Y., and Reif, R., The Electrochemical Society, Pennington, NJ (1987).Google Scholar
11. Tu, K.N., Ahn, K.Y., and Herd, R., J. Appl. Phys., 39(11), 927, (1981).Google Scholar
12. Liu, R., Baiocchi, F.A., Heimbrook, L.A., Kovalchik, J., Malm, D.L., Williams, D.S., and Lynch, W.T., in “ULSI Science and Technology 1987”, eds. Broydo, S. and Osburn, C.M., The Electrochemical Society, Pennington, NJ (1987).Google Scholar
13. Hove, L. Van den, Lippens, P., Maex, K., Hobbs, L., Keersmaecker, R. De, Probst, V., and Schaber, H., Appl. Surf. Sci., 38, 430 (1989).Google Scholar
14. Stoney, G.G., Proc. Royal Soc. (London), A82,172 (1909).Google Scholar
15. Finnegan, J.D. and Hoffman, R.W., “Trans. 8th Nat. Vac. Symp.”, ed. Pruess, L.E., Amer. Vac. Soc., (1961), p.935.Google Scholar
16. Kern, W., Solid State Technology, 15, 34 (1974).Google Scholar
17. Biersack, J.P. and Hoggmark, L.P., Nucl. Instrum. Methods, 174, 257 (1980).Google Scholar
18. Sitaram, A.R., Ph.D. thesis, Rensselaer Polytechnic Institute, Troy, NY (1990).Google Scholar
19. Kalb, J.C. Jr., M.S. thesis, Rensselaer Polytechnic Institute, Troy, NY (1989).Google Scholar
20. Bhushan, B., Rensselaer Polytechnic Institute, Troy, NY, private communication.Google Scholar
21. Ottaviani, G., Tu, K.N., Psaras, P., and Nobili, C., J. Appl. Phys., 57, 1880 (1987).Google Scholar