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In Situ Studies of the Microstructure of a Si:H Surfaces and Interfaces

Published online by Cambridge University Press:  28 February 2011

R. W. Collins
R. W. Collins*
Affiliation:
The Standard Oil Company, Corporate Research Center, 4440 Warrensville Center Rd., Cleveland, OH 44128
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Abstract

Using in situ ellipsometry with a 3.4 eV probe, we have characterized the initial nucleation and interface structure of a-Si:H and μc-Si deposited on oxide/c-Si substrates. Multilayered a-Si:H/a-SiNx:H structures have also been studied and non-uniformities have been modeled. In none of the reported data could we model thin film growth with thickness independent optical functions. Once a film becomes opaque, ellipsometry is very sensitive to changes in the thickness of surface roughness layers. As a result, roughness on single and multilayered a-Si:H films has been studied as well as the renucleation that results from stopping and then restarting the a-Si:H growth plasma.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 361
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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