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In Situ Studies of Nitridation of Cu/Ti Thin Films Using Environmental Cell in Transmission Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

R. Sharma
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ.
Z. Atzmon
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ.
J. Mayer
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ.
S. Q. Hong
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY.
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Abstract

Co-deposited Cu/Ti thin films were heated at various temperatures in an ammonia ambient in an environmental cell fitted in to the column of transmission electron Microscope (TEM). The reaction dynamics was observed in situ and recorded on video using a TV camera with 1/30 sec. time resolution. The nitridation of titanium accompanied by nucleation and growth of copper particles started at 370°C. Ti2N formed at lower temperatures while TiN was formed above 400°C. The nucleation of crystals occurred simultaneously (within a Minute) throughout the film indicating no effect of electron beam on reaction process. The growth rate of copper particles was observed to vary slightly from one particle to another indicating varying growth rate for different facets.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1]. Miyazaki, H., Hinide, K., Homma, Y. and Mukai, K., Japan. J. Appl. Phys. 48, 329 (1987).Google Scholar
[2]. Revesz, P., Gyimesi, J. and Zsoldos, E., J. Appl. Phys. 54 1860 (1983).CrossRefGoogle Scholar
[3]. Osburn, C.M., Brat, T., Sharma, D., Griffis, D., Cocoran, S., Lin, S., Chu, W.K. and Parikh, N., J. Electrochem. Soc. 135, 1490 (1988).CrossRefGoogle Scholar
[4]. Stolt, I., d'Heurle, F.M. and Harper, J.M.E., Thin Solid Films 200 147 (1991).CrossRefGoogle Scholar
[5]. Liotard, J.L., Gupta, D., Psaras, P.A. and Ho, P.S., J. Appl. Phys. 57 1895 (1985).CrossRefGoogle Scholar
[6]. Russell, S.W., Li, J. and Mayer, J.W., J. Appl. Phys. 70, 5153 (1991).CrossRefGoogle Scholar
[7]. Li, J., Mayer, J.W., Shacham-Diamand, Y. and Colgan, E.G., Appl. Phys. Lett. 60, 2983 (1992).CrossRefGoogle Scholar
[8]. Li, J., Shacham-Diamand, Y. and Mayer, J.W., Materials Science Reports 9 1 (1992).CrossRefGoogle Scholar
[9]. Swann, P.R. and Tighe, N.J., Proc. 5th Eur. Reg. Cong. Electron Microscpy, 436 (1972).Google Scholar
[10]. Keddie, J.L., Li, J., Mayer, J.W., and Gianneils, E.P., J. Am. Ceram. Soc. 74 2937 (1991).CrossRefGoogle Scholar
[11] Atzmon, Z., Sharma, R., Mayer, J.W. and Hong, S.Q., Mat. Res. Soc. Symp. Proc., this volume, 1993.Google Scholar