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In Situ Real Time Observation of Chemical Vapor Deposition Using an Environmental Transmission Electron Microscope

Published online by Cambridge University Press:  15 February 2011

Jeff Drucker ,
Renu Sharma ,
Karl Weiss ,
B. L. Ramakrishna  and
John Kouvetakis
Jeff Drucker
Affiliation:
Department of Physics, University of Texas at El Paso, El Paso, TX, 79968–0515
Renu Sharma
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ, 85287
Karl Weiss
Affiliation:
Department of Physics, University of Texas at El Paso, El Paso, TX, 79968–0515
B. L. Ramakrishna
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ, 85287
John Kouvetakis
Affiliation:
Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ 85287
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Abstract

Material synthesis by chemical vapor deposition (CVD) in a number of material systems has been investigated in real time using an environmental transmission electron microscope (ETEM) with 3.8 Å resolution. Here, we will focus on two metal / insulator systems. Al CVD onto SiO2 from trimethyl amine alane and Au CVD from ethyl (trimethylphosphine) gold (I), also onto SiO2. For Al deposition, dendritic growth was observed for all pressure / substrate temperature combinations investigated for growth on untreated SiO2. Subsequent to reaction of the substrate surface with TiC14, almost immediate continuous Al film growth was observed. Growth rates for the Al film could be measured in situ by monitoring the evolution of the growth front at the Al/vacuum interface. In this system, very little enhancement in the metal film growth rate was observed as a consequence of electron beam irradiation for continuous films grown after TiCl4 pretreatment.. This dramatically contrasts with the case of Au CVD investigated. In this instance, growth rate enhancements of up to 150 times were observed during electron beam irradiation as compared to purely pyrolytic decomposition of the precursor on the insulator surface. This growth rate enhancement decreased monotonically with substrate temperature. We surmise that this effect is related to the ratio of precursor surface residence time prior to ecomposition to the probability of collision from the impinging electron beam.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 404: Symposium J – In Situ Electron and Tunneling Microscopy of Dynamic Processes , 1995 , 75
Copyright
Copyright © Materials Research Society 1996

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References

1. Yao, Nan, Spinnler, Gerard E., Kemp, Richard A., Guthrie, Don C., Cates, R. Dwight and Bollinger, C. Mark, Proc. 49th EMSA, 1028 (1991).Google Scholar
2. Drucker, Jeff, Sharma, Renu, Weiss, Karl and Kouvetakis, John, J. Appl. Phys. 77(6), 2846 (1995).Google Scholar
3. Beach, David B., Blum, Samuel E. and LeGoues, Fracoise K., J. Vac. Sci. Technol A 7(5), 3117 (1989).Google Scholar
4. Gross, M.E., Cheung, K.P., Fleming, C.G., Kovalchick, J. and Heimbrook, L.A., J.Vac. Sci. Technol. A9, 57 (1991).Google Scholar
5. Holl, M.M. Banaszak, Seidler, P.F., Kowalczyk, S.P. and McFeely, F.P., Appl. Phys. Lett. 62(13), 1475 (1993).Google Scholar