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Published online by Cambridge University Press: 17 March 2011
Instability in the morphology of atomic steps is predicted for certain growth conditions [1]. To test and extend this prediction, various atomic step geometries were prepared on ultra-flat Si(111) substrates. Atomic steps were observed using an in situ scanning electron microscope. For specific growth conditions and certain step arrangements, unstable growth was observed. The stability of step flow growth depends, in part, on the flux arriving at the surface. In contrast to the theoretical prediction, in this more general situation, the same type of instability can also be observed in sublimation. For both growth and sublimation, the terrace widths adjacent to a step determine whether that step will undergo stable or unstable step flow. The mechanism by which the step spacing controls the morphology is described. Although only the Si(111) surface was observed, it is predicted that the same step instability should be present on many surfaces.