Hostname: page-component-669899f699-7xsfk Total loading time: 0 Render date: 2025-04-28T16:58:29.983Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ Monitoring of MOCVD of Aluminum Nitride by Optical Spectroscopies

Published online by Cambridge University Press:  10 February 2011

S.C. Allen  and
H.H. Richardson
S.C. Allen
Affiliation:
Department of Chemistry and Biochemistry, Ohio University, Athens, OH 45701, [email protected]
H.H. Richardson
Affiliation:
Department of Chemistry and Biochemistry, Ohio University, Athens, OH 45701, [email protected]
Get access

Abstract

Trimethylaluminum and ammonia were used as precursors in the high temperature (900°C) deposition of AIN on silicon at vacuum pressure. The emitted radiation was collected in situ by a FTIR spectrometer. Film thickness was monitored in situ by interference oscillations in a red diode laser beam reflected off the sample. The thickness measurements were correlated with IR emission spectra from the emerging AIN film, and a principal component analysis (PCA) and principal component regression (PCR) were performed on the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 301
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Rouviere, J. L., Arlery, M., Niebuhr, R., Bachem, K. H., Briot, O., MRS Internet J. Nitride Semicond. Res. 1, 33 (1996).Google Scholar
2.Hasegawa, F., Takahashi, T., Kubo, K., Nannichi, Y., Jpn. J. Appl. Phys. 26, 1555 (1987).Google Scholar
3.Considine, L., Thrush, E.J., Crawley, J.A., Jacobs, K., Stricht, W. Van der, Moerman, I., Demeester, P., Park, G.H., Hwang, S.J., Song, J.J., Journal of Crystal Growth 195, (1998).Google Scholar
4.Nakamura, S., Jpn. J. Appl. Phys. 30, (1991).Google Scholar
5.Mazur, U., Cleary, A. C., J. Phys. Chem. 94, 189 (1990).Google Scholar
6. Program package, Sirius 6.5, web site: www.prs.no.Google Scholar
7.Zollner, S., Konkar, A., Gregory, R.B., Wilson, S.R., Nikishin, S.A., Temkin, H., Mat. Res. Soc. Symp. Proc. 572, 231 (1999).Google Scholar