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In Situ Monitoring of Anodic Oxide Growth on SI (001) by Interface Second-Harmonic Generation
Published online by Cambridge University Press: 10 February 2011
Abstract
Optical second-harmonic (SH) generation is used to monitor the anodic growth of oxide on a (001) Si surface. The measured SH intensity is dominated by the nonlinear optical response of the space charge region in the Si just below the Si/oxide interface. The interface SH technique can detect the onset of H desorption, identify the flat band potential, and probe the evolution of space charge within the growing oxide layer.
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- Copyright © Materials Research Society 1998