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In Situ IR Absorption Study of H Bonding in a-Si:H Thin Films

Published online by Cambridge University Press:  21 February 2011

M. Katiyar ,
G. F. Feng ,
J. R. Abelson  and
N. Maley
M. Katiyar
Affiliation:
Coordinated Science Laboratory and Department of Materials Science and Engineering, University of Illinois, 1101 W. Springfield Ave., Urbana, IL 61801.
G. F. Feng
Affiliation:
Coordinated Science Laboratory and Department of Materials Science and Engineering, University of Illinois, 1101 W. Springfield Ave., Urbana, IL 61801.
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and Department of Materials Science and Engineering, University of Illinois, 1101 W. Springfield Ave., Urbana, IL 61801.
N. Maley
Affiliation:
Coordinated Science Laboratory and Department of Materials Science and Engineering, University of Illinois, 1101 W. Springfield Ave., Urbana, IL 61801.
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Abstract

We have used real time, in situ infrared reflectance spectroscopy to study the evolution of Si-H bonding during the growth of hydrogenated amorphous silicon (a-Si:H) by dc magnetron reactive sputtering. The surface Si-H stretching mode (2100 cm-l) is observed in films 5 Å thick and the 2000 cm-l mode, which has been attributed to isolated monohydrides in the bulk, appears for thickness (d) < 10–15 Å For larger thicknesses the intensity of both modes increases approximately linearly. These trends are interpreted in terms of the nucleation and coalescence of islands for d> 15 Å followed by bulk-like growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 295
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Blayo, N., Blom, P. and Drevillon, B., Physica B (in press).Google Scholar
2. Wadayama, T., Suetaka, W. and Sekiguchi, A., Jpn. J. of Appl. Phys. 27, 501 (1988).Google Scholar
3. Toyoshima, Y., Arai, K., Matsuda, A. and Tanaka, K., Appl. Phys. Lett. 56, 1540 (1990).Google Scholar
4. Toyoshima, Y., Arai, K., Matsuda, A. and Tanaka, K., Appl. Phys. Lett. 57, 1028 (1990).Google Scholar
5. Maley, N., to be published.Google Scholar
6. Maley, N., Szafranek, I., Mandrell, L., Katiyar, M., Abelson, J.R. and Thornton, J.A., J. Non-Cryst. Solids. 114, 163 (1989).Google Scholar
7. Maley, N. and Szafranek, I., to be published.Google Scholar
8. Maley, N., unpublished data.Google Scholar
9. See, for example, Cardona, M., Phys. Stat. Solidi B118, 463 (1983).Google Scholar
10. Collins, R.W. in Amorphous Silicon and Related Materials, ed. by Fritzsche, H. (World Scientific, Singapore, 1988), Vol.B, p. 1003.Google Scholar
11. Feng, G.F., Katiyar, M., Abelson, J.R., and Maley, N., Spring Symposium of the Mat. Res. Soc. on Amorphous Silicon, April 29 - May 3, 1991, Anaheim, CA. Google Scholar
12. An, I., Nguyen, H., Nguyen, N., and Collins, R.W., Phys. Rev. Lett. 65, 2274 (1991).Google Scholar