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In Situ Ion Implantation for Quantitative SIMS Analysis

Published online by Cambridge University Press:  22 February 2011

Richard T. Lareau  and
Peter Williams
Richard T. Lareau
Affiliation:
Department of Chemistry, Arizona State University Tempe, AZ 85287
Peter Williams
Affiliation:
Department of Chemistry, Arizona State University Tempe, AZ 85287
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Abstract

The primary ion column of a secondary ion mass spectrometer (Cameca IMS 3f) has been used as an ion implanter to prepare calibrated standards, In situ for quantitative SIMS analysis, with an accuracy better than 10%. The technique has been used to determine oxygen concentrations in contaminated TiSi2 films by implanting a reference level of 18O into a portion of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 273
Copyright
Copyright © Materials Research Society 1985

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References

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