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In Situ Ion Implantation for Quantitative SIMS Analysis

Published online by Cambridge University Press:  22 February 2011

Richard T. Lareau  and
Peter Williams
Richard T. Lareau
Affiliation:
Department of Chemistry, Arizona State University Tempe, AZ 85287
Peter Williams
Affiliation:
Department of Chemistry, Arizona State University Tempe, AZ 85287
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Abstract

The primary ion column of a secondary ion mass spectrometer (Cameca IMS 3f) has been used as an ion implanter to prepare calibrated standards, In situ for quantitative SIMS analysis, with an accuracy better than 10%. The technique has been used to determine oxygen concentrations in contaminated TiSi2 films by implanting a reference level of 18O into a portion of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 273
Copyright
Copyright © Materials Research Society 1985

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References

[1] Grittins, R.P., Morgan, D.V., Dearnaley, G., J. Phys. 5, 1654–63 (1972).Google Scholar
[2] Croset, M., Dieumegard, D., Corros. Sci. 16, 703–15 (1976).Google Scholar
[3] Williams, P., IEEE Trans. Nucl Sci 26, 1809–11 (1979).Google Scholar
[4] Leta, D., Morrison, G.H., Anal Chem. 52, 277–80 (1980).Google Scholar
[5] Wittmaack, K., Surf Sci. 112, 168–180 (1981).Google Scholar
[6] Gourgout, J.-M., Secondary Ion Mass Spectrometry II ed. by Benninghoven, A., Evans, C.A. Jr., Powell, R.A., Shimuzu, R., Storms, H.A., Springer Series in Chemical Physics, Vol.9 (Springer, Berlin, Heidelberg, New York, 1979) p. 286–290.Google Scholar
[7] Le Goux, J.J., Migeon, H.N., Secondary Ion Mass Spectrometry III, ed. by Benninghoven, A., Evans, C.A. Jr., Powell, R.A., Shimizu, R., Storms, H.A., Springer Series in Chemical Physics, Vol. 19 (Springer, Berlin, Heidelberg, New York, 1981) p. 52–56.Google Scholar
[8] Williams, P., Stika, K.M., Davies, A., Jackman, T.E., Nucl Inst. Meth. 218, 299–302 (1983).CrossRefGoogle Scholar
[9] Any point in the central region of the raster over which the beam passes completely receives a dose which is the integral of the current over the beam profile. For a given total current in the beam, this integral is independent of the beam diameter.Google Scholar