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Impurity and Stoichiometry Control in Atomic Layer Epitaxy

Published online by Cambridge University Press:  03 September 2012

H. Yokoyama ,
K. Ikuta  and
N. Inoue
H. Yokoyama
Affiliation:
NTT LSI Laboratories 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan
K. Ikuta
Affiliation:
NTT LSI Laboratories 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan
N. Inoue
Affiliation:
NTT LSI Laboratories 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan
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Abstract

We investigate the intrinsic point defects in epilayers grown by atomic layer epitaxy (ALE). Ga vacancies and antisite As atoms in the epilayers are detected by photoluminescence spectroscopy. This shows that the ALE epilayer was grown under As-rich conditions. We propose increasing the TMG flux to reduce the number of point defects. With this method, the number of point defects in ALE epilayers can be decreased to less than that in conventionally grown epilayers. Moreover, it is'found that these point defects are formed by the incomplete Ga coverage, not by the steric hindrance as previously suggested. The carbon concentration is decreased by one order of magnitude by using nitrogen instead of hydrogen as the carrier gas. As an application of this low defect density, we fabricated a GaAs/AlAs resonant tunneling diode and observed the negative resistance at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 143
Copyright
Copyright © Materials Research Society 1992

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References

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