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Improving the Organic Semiconductor- Metal Contact Interface in Printed High Performance Organic TFTs

Published online by Cambridge University Press:  07 February 2012

Kanan Puntambekar ,
Lisa Stecker ,
Kurt Ulmer ,
Themistokles Afentakis  and
Steven Droes
Kanan Puntambekar
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd, Camas, WA-98607, USA.
Lisa Stecker
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd, Camas, WA-98607, USA.
Kurt Ulmer
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd, Camas, WA-98607, USA.
Themistokles Afentakis
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd, Camas, WA-98607, USA.
Steven Droes
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd, Camas, WA-98607, USA.
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Abstract

Optimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D electrodes with an optimal self-assembled thiol layer; a process that requires pristine metal surfaces for successful treatment. Obtaining contamination free surfaces can be challenging in the case of printed metal electrodes. Here we demonstrate an effective strategy to address this issue by introducing a brief low power forming gas plasma treatment prior to the surface coating step. We show a two orders of magnitude decrease in the contact resistance as a result of this treatment.

Keywords

ink-jet printingdevicesorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1402: Symposium U – Charge Generation/Transport in Organic Semiconductor Materials , 2012 , mrsf11-1402-u13-28
Copyright
Copyright © Materials Research Society 2012

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References

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