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Improving Stability of Pentacene Field-Effect Transistors with Post-Annealing

Published online by Cambridge University Press:  01 February 2011

Shun-Wei Liu ,
Jia-Cing Huang ,
Chih-Chien Lee ,
Chin-Ti Lee  and
Juen-Kai Wang
Shun-Wei Liu
Affiliation:
[email protected], Academia Sinica, Institute of Chemistry, No. 128, Academia Rd., Taipei 11542, Taiwan, Taipei, N/A, Taiwan, +886-02-27898538, +886-02-27831237
Jia-Cing Huang
Affiliation:
[email protected], National Taiwan University of Science and Technology, Department of Electronic Engineering, Taipei, 106, Taiwan
Chih-Chien Lee
Affiliation:
[email protected], National Taiwan University of Science and Technology, Department of Electronic Engineering, Taipei, 106, Taiwan
Chin-Ti Lee
Affiliation:
[email protected], Academia Sinica, Institute of Chemistry, No. 128, Academia Rd., Taipei 11542, Taiwan, Taipei, N/A, Taiwan
Juen-Kai Wang
Affiliation:
[email protected], National Taiwan University, Center for Condensed Matter Sciences, Taipei, 106, Taiwan
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Abstract

In this report, we demonstrate that the performance and stability of pentacene top-contact field-effect transistor can be greatly improved with post-annealing treatment. After post-annealing at 90°C for 12 hours in nitrogen environment, the hole field-effect mobility of 0.3 cm2/Vs and the on/off current ratio of 107 were achieved, demonstrating 100% improvement in performance after the post-annealing treatment. The decay rate of drain current at constant gate and drain-source voltage was found to be decreased by more than 40%. The improved performance is attributed to the elimination of trapped holes and lattice defects in the organic semiconductor layer due to the post-annealing process.

Keywords

optoelectronicthin filmorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1029: Symposium F – Interfaces in Organic and Molecular Electronics III , 2007 , 1029-F09-12
Copyright
Copyright © Materials Research Society 2008

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