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Improvements of a-Si:H/CsI(TI) X-RAY Detectors for Radiation Monitoring

Published online by Cambridge University Press:  21 February 2011

C. Manfredotti ,
F. Fizzotti ,
M. Boero ,
F. Cannistraci ,
E. Vittone ,
A. Torti  and
M. Turnaturi
C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1, Torino, Ind Consorzio INFM, Italy
E. Vittone
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1, Torino, Ind Consorzio INFM, Italy
M. Turnaturi
Affiliation:
IRCI, Borgaro Torinese (TO), Italy
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Abstract

Photosensitive a-Si:H p-i-n diodes, working in photovoltaic mode, have been coupled to CsI(T1) scintillators for dosimetry applications to X-ray monitoring in the energy range from 50 keV up to 15 MeV. A “mesa” approach for p-i-n diodes has been adopted both in order to better define the geometry and to obtain very low dark current. In order to optimize the geometry, a computer program has been created which simulates light generation in the scintillator, the collection by the detector and the photovoltaic current obtained as a function of exposure rate.

Measurements have been carried out in the X-rays energy ranges 50-240 keV, at 6MeV and at 15 MeV. Detectors are linear in response and shows a good sensitivity, with the capability of measuring dose rates as low as 60 mR/h.

The agreement between experimental data and simulation outputs can be considered good.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 543
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Manfredotti, C., in Winter European Course on Amorphous Silicon, edited by Spear, W.E. and Manfredotti, C., (Folgaria, Italy, 1988).Google Scholar
[2] Antonuk, L.E., Boudry, T., Huong, W., Sham, D.L. Mc, Morton, E.J., Yorkston, J., Lange, M., Street, R.A., Med. Phys. 19, 1455 (1992)CrossRefGoogle Scholar
[3] Fujeda, I., Cho, G., Gee, J.D.T., Jung, T., Kaplan, S.N., Perez-Mendez, V., Wildermith, D., Street, R.A., IEEE Symp. Nucl. Sci., Washington 1990 Google Scholar
[4] Antonuk, L.E., Yorkston, J., Huang, W., Boundry, J., Morton, E.J., Longo, M.J., Street, R.A., Proc. Mat. Research Soc. Symposium, S. Francisco 1992 Google Scholar
[5] Manfredotti, C., Faccio, F., Fizzotti, F., Marchisio, R., Nucl. Instr. Meth. in Phys. Research. A322, 483 (1992)CrossRefGoogle Scholar
[6] Pochet, T. Dubeau, J. Equer, B. Karar, A., Hamel, L.A., Joum. of Appl. Phys. 68,1340 (1990)CrossRefGoogle Scholar
[7] Amato, G., Benedetto, G., Boarino, L. Spagnolo, R., Solid State Comm. 72,172 (1991)Google Scholar
[8] Tsuo, Y.S., Xu, Y., Baker, D.W., Deb, S.K., Mat. Research Soc. Proc. Symposium, Spring Meeting, Anaheim (1991)Google Scholar