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Improvement of Thermal Stability of Metal/Oxide Interface for Electronic Devices

Published online by Cambridge University Press:  10 February 2011

Yo Ichikawa ,
Masayoshi Hiramoto ,
Nozomu Matsukawa ,
Kenji Iijima  and
Masatoshi Kitagawa
Yo Ichikawa
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
Masayoshi Hiramoto
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
Nozomu Matsukawa
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
Kenji Iijima
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
Masatoshi Kitagawa
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
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Abstract

The nano-meter controlled iron/iron-oxide multilayer materials have been successfully obtained by the pulse reactive sputtering method with high deposition rate. These multilayer demonstrated a good thermal stability of its structure and magnetic properties up to 500°C when a small amount of Si was doped in the structure, whereas the non-doped multilayer degraded at above 300°C. The difference of the oxidation energy between Fe and Si increases the thermal stability of the interface between Fe and Fe-O layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 494: Symposium V – Science & Technology of Magnetic Oxides , 1997 , 143
Copyright
Copyright © Materials Research Society 1998

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References

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