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Improvement of the interface quality between Zn (O,S,OH)x buffer and Cu(InGa)(SeS)2 surface layers to enhance the fill factor over 0.700
Published online by Cambridge University Press: 21 March 2011
Abstract
For realizing the proof of mass production capablity or a move toward a GW/a production, 16%-efficiency project has been started setting the target of each parameter as V∝: 0.685 V/cell, FF: 0.735 and Jsc: 31.8mA/cm2. Up to FY2008, the target of each parameter independently has been achieved expect the efficiency. All of our research by adjusting the two resistance (Rsh and Rs) in the monolithically integrated 30cm×30cm-sized circuits. To improve the FF, double buffer structure with CBD-Zn(O,S,OH)x and MOCVD-ZnO is proposed and the thickness is adjusted by optimizing the Rs and the Rsh. As the result, FF of over 0.7 has been achieved for the first time in our CIS R&D since FY 1993.
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- Copyright © Materials Research Society 2009