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Improvement of Single-Junction a-Si:H Thin-Film Solar Cells Toward 10% Efficiency

Published online by Cambridge University Press:  23 June 2011

P. H. Cheng ,
S. W. Liang ,
Y. P. Lin ,
H. J. Hsu ,
C. H. Hsu  and
C. C. Tsai
P. H. Cheng
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
S. W. Liang
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
Y. P. Lin
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
H. J. Hsu
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
C. H. Hsu
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
C. C. Tsai
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
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Abstract

The hydrogenated amorphous silicon (a-Si:H) single-junction thin-film solar cells were fabricated on SnO2:F-coated glasses by plasma-enhanced chemical vapor deposition (PECVD) system. The boron-doped amorphous silicon carbide (a-SiC:H) was served as the window layer (p-layer) and the undoped a-SiC:H was used as a buffer layer (b-layer). The optimization of the p/b/i/n thin-films in a-Si:H solar cells have been carried out and discussed. Considering the effects of light absorption, electron-hole extraction and light-induced degradation, the thicknesses of p, b, n and i layers have been optimized. The optimal a-Si:H thin-film solar cell having an efficiency of 9.46% was achieved, with VOC=906 mV, JSC=14.42 mA/cm2 and FF=72.36%.

Keywords

amorphousplasma-enhanced CVD (PECVD) (deposition)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a05-03
Copyright
Copyright © Materials Research Society 2011

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References

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