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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

Published online by Cambridge University Press:  10 February 2011

H. Amano ,
M. Iwaya ,
N. Hayashi ,
T. Kashima ,
M. Katsuragawa ,
T. Takeuchi ,
C. Wetzel  and
I. Akasaki
H. Amano
Affiliation:
Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
M. Iwaya
Affiliation:
Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
N. Hayashi
Affiliation:
Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Kashima
Affiliation:
Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
M. Katsuragawa
Affiliation:
Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Takeuchi
Affiliation:
Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
C. Wetzel
Affiliation:
Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
I. Akasaki
Affiliation:
Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Abstract

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGalxN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AIN interlayers on the structural quality of group III nitrides is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G10.1
Copyright
Copyright © Materials Research Society 1999

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