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Improvement of Barrier Properties of TaN Film by Plasma Enhanced Atomic Layer Deposition

Published online by Cambridge University Press:  01 February 2011

In Cheol Baek ,
Han Choon Lee ,
Cheonman Sim ,
Jae Won Han ,
Kee Ho Kim ,
Soo Hyun Kim  and
Sahng Kyoo Lee
In Cheol Baek
Affiliation:
[email protected], Dongbu Electronics, Advanced Nano-tech Development Division, 474-1, Sangwoo-Ri, Gamgok-Myeon, Eumseong-Gun, Chungbuk, 369-852, Korea, Republic of, +82-43-879-5860, +82-43-879-9911
Han Choon Lee
Affiliation:
[email protected], Dongbu Electronics, Advanced Nano-tech Development Division, 474-1 Sangwoo-ri, Gamgok-myeon, Eumseong-gun, Chungbuk, 369-852, Korea, Republic of
Cheonman Sim
Affiliation:
[email protected], Dongbu Electronics, Advanced Nano-tech Development Division, 474-1 Sangwoo-ri, Gamgok-myeon, Eumseong-gun, Chungbuk, 369-852, Korea, Republic of
Jae Won Han
Affiliation:
[email protected], Dongbu Electronics, Advanced Nano-tech Development Division, 474-1 Sangwoo-ri, Gamgok-myeon, Eumseong-gun, Chungbuk, 369-852, Korea, Republic of
Kee Ho Kim
Affiliation:
[email protected], Dongbu Electronics, Advanced Nano-tech Development Division, 474-1 Sangwoo-ri, Gamgok-myeon, Eumseong-gun, Chungbuk, 369-852, Korea, Republic of
Soo Hyun Kim
Affiliation:
[email protected], IPS Ltd., Advanced Development Team, 33, Jije-dong, Pyeongtaek, Gyeonggi-do, 450-090, Korea, Republic of
Sahng Kyoo Lee
Affiliation:
[email protected], IPS Ltd., Advanced Development Team, 33, Jije-dong, Pyeongtaek, Gyeonggi-do, 450-090, Korea, Republic of
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Abstract

The barrier metal properties of Plasma Enhanced ALD (PEALD) TaN deposited on low-k dielectric film (SiCOH) with a k value of 3.0 at a deposition temperature of 300°C by using pentakis (ethylmethylamino) tantalum (PEMAT) and various plasma gases was investigated. The film resistivity of TaN is about 1000 μΩ.cm under the plasma power of 200 W and the frequency of 400 KHz, respectively. The resistivity was significantly reduced by approximately 360 μΩ.cm for the optimized condition of 300 W and 13.56 MHz. In addition, good uniformity was obtained by applying two-step plasma treatment process. The film thickness per cycl of the TaN using two-step plasma was decreased from 1.0 Å to 0.65 Å by reducing a base pressure, indicating the increase of the film density. The PEALD TaN with almost 100% coverage in this paper's dual damascene structure has a contact resistance of about 1.6 Ω /chain at via size of 0.19um.

Keywords

atomic layer depositionplasma depositionbarrier layer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-09
Copyright
Copyright © Materials Research Society 2006

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References

references

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