Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T10:16:08.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved Stability of Hydrogenated Amorphous Silicon Solar Cells Fabricated by Triode-Plasma CVD

Published online by Cambridge University Press:  01 February 2011

H. Sonobe ,
A. Sato ,
T. Fujibayashi ,
S. Shimizu ,
T. Matsui ,
A. Matsuda  and
M. Kondo
H. Sonobe
Affiliation:
Nagasaki Research and Development Center, Mitsubishi Heavy Industries, Japan National Institute of Advanced Industrial Science and Technology, Japan
A. Sato
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
T. Fujibayashi
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
S. Shimizu
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
T. Matsui
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
A. Matsuda
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
M. Kondo
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
Get access

Abstract

We have employed a triode-type plasma CVD system to fabricate highly stabilized hydrogenated amorphous silicon (a-Si:H) solar cells. The p-i-n type solar cells were fabricated on a textured SnO2/glass substrate (ASAHI VU type). By applying a triode system, the Si-H2 bond density in the film decreased to about one third (from 1.7 at.% for conventional parallel-plate-electrode to 0.6 at.% for a triode configuration), and correspondingly the degradation ratio decreased from 13 % to 10 %. We have achieved the degradation ratio of 5 % by optimizing the player deposition conditions. In case of a triode system, there were minor effects of higher hydrogen dilution in the stabilized efficiency. We have experimented the effects of the substrate temperature for a higher stabilized efficiency. Further improvement in solar efficiency has been made by applying antireflection layers to air/glass and TCO/p interfaces. As a result, we have achieved the stabilized efficiency of 9.22 % (Jsc = 15.9 mA/cm2, Voc = 0.863 V, FF = 0.672) with a degradation ratio of 7.8 %. We have also employed the triode-deposited a-Si:H solar cell to a tandem type solar cell with a structure of a-Si:H/hydrogenated microcrystalline silicon (μc-Si:H). We have achieved the stabilized efficiency of 10.9 % (Jsc = 12.0 mA/cm2, Voc = 1.31 V, FF = 0.691) with a degradation ratio of 7.3 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A11.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Staebler, D. L., Wronski, C. R., Appl. Phys. Lett. 31(4)(1977)292.10.1063/1.89674Google Scholar
2 Okamoto, S., Hishikawa, Y., Tsuda, S., Jpn. J. Appl. Phys. 35(1996)pp.26.10.1143/JJAP.35.26Google Scholar
3 Shimizu, S., Miyahara, H., Kondo, M., Matsuda, A., J. Non-Cry. Solids. 338-340(2004)47 10.1016/j.jnoncrysol.2004.02.019Google Scholar
4 Nakamura, N., Takahama, T., Isomura, M., Nishikuni, M., Yoshida, K., Tsuda, S., Nakano, S., Ohnishi, M., Kuwano, Y., Jpn. J. Appl. Phys. 28(1989)pp.1762.10.1143/JJAP.28.1762Google Scholar
5 Bhattachrya, E., Mahan, A. H., Appl. Phys. Lett. 52(19)(1988)1587.10.1063/1.99089Google Scholar
6 Shimizu, S., Shimosawa, M., Miyahara, H., Kondo, M., Matsuda, A., Proc. of WCPEC-3, B(2003)pp1615.Google Scholar
7 Nishimoto, T., Takai, M., Miyahara, H., Kondo, M., Matsuda, A., J. Non-Cry. Solids. 299-302(2002)pp.1116.10.1016/S0022-3093(02)00942-0Google Scholar
8 Fujiwara, H., Kondo, M. and Matsuda, A., J. Appl. Phys. 91(2002)pp.4181 10.1063/1.1457535Google Scholar
9 Shimizu, S., Kondo, M. and Matsuda, A., In Technical Digest of the 14th Intern. Photovoltaic Science and Engineering Conf. (PVSEC-14), Thailand, (2004)649 Google Scholar
10 Isomura, M., Kondo, M. and Matsuda, A., Jpn. J. Appl. Phys. 39(2000)pp.3339.10.1143/JJAP.39.3339Google Scholar
11 Nasuno, Y., Kondo, M. and Matsuda, A., Appl. Phys. Lett. 78(16)(2001)2330 10.1063/1.1364657Google Scholar
12 Nasuno, Y., Kondo, M., Matsuda, A., Fukuhori, H. and Kanemitsu, Y., Appl. Phys. Lett. 81(17)(2002)3155 10.1063/1.1514396Google Scholar
13 Matsui, T., Fujibayashi, T., Nasuno, Y., Fukuhori, H., Kanemitsu, Y., Kondo, M. and Matsuda, A., Proc. of 3rd-WCPEC, (2003)1831 Google Scholar