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Improved Sensitivity SiC Hydrogen Sensor

Published online by Cambridge University Press:  15 March 2011

C. I. Muntele ,
D. Ila ,
E. K. Williams ,
Iulia C. Muntele ,
A. L. Evelyn ,
D. B. Poker  and
D. K. Hensley
C. I. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762-1447, USA
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762-1447, USA
E. K. Williams
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762-1447, USA
Iulia C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762-1447, USA
A. L. Evelyn
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762-1447, USA
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
D. K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
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Abstract

We have produced silicon carbide sensors by two techniques: palladium coating and low energy palladium implantation. The palladium implantation was done at 550°C into the Si face of 6H, n-type SiC at various energies and at various fluences. The sensitivity of each sensor was measured at temperatures between 20°C to 400°C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behavior than the SiC sensors produced by Pd deposition. In the Pd deposited SiC sensors, as well as in the ones reported in the literature [1, 2], the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100°C [3].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.6.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Hunter, G. W., Neudeck, P. G., Chen, L. Y., Knight, D., Liu, C. C., Wu, Q. H., AIAA 95-2647, Joint Propulsion Conference and Exhibit, 1995, San Diego, CA.Google Scholar
2. Chen, L. Y., Hunter, G. W., Neudeck, P. G., Knight, D., Liu, C. C., Wu, Q. H., The 190th Meeting of the Electron Society, 1996, San Antonio, TX. Google Scholar
3. Muntele, C. I., Ila, D., Williams, E. K., Poker, D. B., Hensley, D. K., presented at the 1999 MRS Fall Meeting, Boston, MA, 1999 (in print).Google Scholar