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Improved properties of TaOx films doped with Al and N

Published online by Cambridge University Press:  10 February 2011

R. B. van Dover ,
L. F. Schneemeyer ,
R. M. Fleming  and
D. J. Werder
R. B. van Dover
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
L. F. Schneemeyer
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
R. M. Fleming
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
D. J. Werder
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with ∼2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of ∼750 individual capacitors in each experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 561
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Shinriki, H. and Nakata, M., IEEE Trans. Electron Dev. ED–38, 455 (1991); K. W. Kwon, et al., IEDM Technical Digest 1994, pp.835-838. M.-B. Lee, et al., IEDM Tech. Dig. 1996, pp. 683-686.Google Scholar
2. Sun, S. C. and Chen, T. F., IEEE Electron Device Letters 17, 355 (1996).Google Scholar
3. Fujikawa, H. and Taga, Y., J. Appl. Phys. 75, 2538 (1994).Google Scholar
4. Nomura, K., Ogawa, H., and Abe, A., J. Electrochem. Soc. 134, 922 (1987); K. Nomura and H. Ogawa, J. Electrochem. Soc. 138, 3701 (1991).Google Scholar
5. Young, P. L., Fehlner, F. P., and Whitman, A. J., J. Vac. Sci. Tech. 14, 174 (1977).Google Scholar
6. Sawatzky, E. and Kay, E., IBM J. Res. Develop. 13, 696 (1969); R. B. van Dover, L. F. Schneemeyer and R. M. Fleming, Nature 392, 162 (1998).Google Scholar
7. Gerstenberg, D., “Thin Film Capacitors,” in Haridbook of Thin Film Technology, Maissel, L. and Glang, R., Eds. (McGraw-Hill, NY, 1970) p. 19–8.Google Scholar