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Improved Properties of a-SiC:H Alloys with Reduced Density of CH3 Radicals

Published online by Cambridge University Press:  21 February 2011

S. S. Camargo Jr ,
M. L. de Oliveira ,
A. A. Pasa  and
C. Gatts
S. S. Camargo Jr
Affiliation:
Progama de Engenharia Metalurgica e de Materials - COPPE Universidade Federai do Rio de Janeiro, Caixa Postai 68505, Rio de Janeiro, RJ, CEP 21945, Brazil.
M. L. de Oliveira
Affiliation:
Progama de Engenharia Metalurgica e de Materials - COPPE Universidade Federai do Rio de Janeiro, Caixa Postai 68505, Rio de Janeiro, RJ, CEP 21945, Brazil.
A. A. Pasa
Affiliation:
Progama de Engenharia Metalurgica e de Materials - COPPE Universidade Federai do Rio de Janeiro, Caixa Postai 68505, Rio de Janeiro, RJ, CEP 21945, Brazil.
C. Gatts
Affiliation:
Progama de Engenharia Metalurgica e de Materials - COPPE Universidade Federai do Rio de Janeiro, Caixa Postai 68505, Rio de Janeiro, RJ, CEP 21945, Brazil.
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Abstract

In this paper we report on the properties of a-SiC:H alloys with reduced density of CH3 radicals obtained by hydrogen dilution of gases. A reduced density of voids, hydrogen content and density of carbon bonded hydrogen atoms, were obtained; while carbon content and density of Si-H bonds are not affected much. A reduction of the optical gap and an increase of the refractive index were observed and related to the reduced densities of CH3 groups and voids. Dark- and photo- conductivity measurements showed that a performance comparable to the best undiluted films may be easily achieved, associated with a shift of the dark Fermi level towards the conduction band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 613
Copyright
Copyright © Materials Research Society 1992

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References

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