Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T15:42:01.784Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved Adhesion for SiO2 Particles on Silica Substrates using Helium-Ion Irradiation

Published online by Cambridge University Press:  21 February 2011

R. G. Musket  and
I. M. Thomas
R. G. Musket
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
I. M. Thomas
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
Get access

Abstract

We have examined the effects of irradiation with 200 keV helium ions on the adhesion and optical transmission properties of 220 nm thick antireflective, optical coatings that consisted of layers of spherical, 20 nm diameter silica particles. In the as-deposited state these sol-gel coatings have very low adhesion to the fused silica subtrates. Results for adhesion and optical transmission have been obtained for doses of 1013–1017 He/cm2. Significant improvement in adhesion was found for doses exceeding about 2×1014 He/cm2. Optical transmission measurements for wavelengths of 200–1200 nm showed increasing absorption with dose. We have evidence that the helium ions decompose various contaminants in the coating into two types of degradation products. One is volatile and the other remains in the coating as optically absorbing species. UV/oxidative-gas treatment effectively removes the absorbing species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 119: Symposium F – Adhesions in Solids , 1988 , 121
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Musket, R.G., Thomas, I.M., and Wilder, J.G., Appl. Phys. Lett. 52, 410 (1988).Google Scholar
2. Mitchell, I.V., Williams, J.S., Smith, P., and Elliman, R.G., Appl. Phys. Lett. 44, 193 (1984).Google Scholar
3. Ziegler, J.F., Biersack, J.P., and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, N.Y., 1985).Google Scholar
4. Thomas, I.M., Appl. Opt. 25, 1481 (1986).Google Scholar
5. Tuck Tape Co., New Rochelle, NY 10801.Google Scholar
6. Zafonte, L. and Chiu, R., SPIE Conference on Microlithography, paper 470–19, March 1984.Google Scholar
7. Baglin, J.E.E., Clark, C.J., and Bottiger, J., Mat. Res. Soc. Symp. Proc. Vol. 25, 179 (1984).Google Scholar
8. Mitchell, I.V., Williams, J.S., Sood, D.K., Short, K.T., Johnson, S., and Elliman, R.G., Mat. Res. Soc. Symp. Proc. Vol.25, 189 (1984).Google Scholar
9. Ashby, C.I.H., Appl. Phys. Lett. 43, 609 (1983).Google Scholar
10. Tombrello, T.A., Intl. J. Mass Spectr. and Ion Phys. 53, 307 (1983).Google Scholar
11. Tombrello, T.A., Mat. Res. Soc. Symp. Proc. Vol.25, 173 (1984).CrossRefGoogle Scholar
12. Griffith, J.F., Qiu, Y., and Tombrello, T.A., Nucl. Instr. and Methods 198, 607 (1982).Google Scholar
13. Haff, P.K., Appl. Phys. Lett. 29, 473 (1976).Google Scholar
14. Seiberling, L.E., Meins, C.K., Cooper, B.H., Griffith, J.E., Mendenhall, M.H., and Tombrello, T.A., Nucl. Instr. and Methods 198, 17 (1982).CrossRefGoogle Scholar